Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

In a Dirac semimetal, each Dirac node is resolved into two Weyl nodes with opposite "handedness" or chirality. The two chiral populations do not mix. However, in parallel electric and magnetic fields ( E: || B: ), charge is predicted to flow between the Weyl nodes, leading to negative magnetoresistance. This "axial" current is the chiral (Adler-Bell-Jackiw) anomaly investigated in quantum field theory. We report the observation of a large, negative longitudinal magnetoresistance in the Dirac semimetal Na3Bi. The negative magnetoresistance is acutely sensitive to deviations of the direction of B: from E: and is incompatible with conventional transport. By rotating E: (as well as B: ), we show that it is consistent with the prediction of the chiral anomaly.

Topological insulators are insulating materials that display massless, Dirac-like surface states in which the electrons have only one spin degree of freedom on each surface. These states have been imaged by photoemission, but little information on their transport parameters, for example, mobility, is available. We report the observation of Shubnikov-de Haas oscillations arising from the surface states in nonmetallic crystals of Bi(2)Te(3). In addition, we uncovered a Hall anomaly in weak fields, which enables the surface current to be seen directly. Both experiments yield a surface mobility (9000 to 10,000 centimeter(2) per volt-second) that is substantially higher than in the bulk. The Fermi velocity of 4 x 10(5) meters per second obtained from these transport experiments agrees with angle-resolved photoemission experiments.

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We report the characterization of Bi 2 Te 2 Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered SeTe distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing.The crystals displaying high resistivity (> 1 Ωcm) and low carrier concentration (∼ 5×10 16 /cm 3 ) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.

We report measurements of the surface Shubnikov de Haas oscillations (SdH) on crystals of the topological insulator Bi2Te2Se. In crystals with large bulk resistivity (∼4 Ωcm at 4 K), we observe ∼15 surface SdH oscillations (to the n = 1 Landau Level) in magnetic fields B up to 45 Tesla. Extrapolating to the limit 1/B → 0, we confirm the 1 2 -shift expected from a Dirac spectrum. The results are consistent with a very small surface Lande g-factor.

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