Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity ()

Xiong, Junlin; Petersen, Ansgar; Qu, Dongxia; Hor, Y. S.; Cava, R. J.; Ong, N. P.

doi:10.1016/j.physe.2011.09.011

Cited by 174 publications

(217 citation statements)

References 19 publications

(22 reference statements)

Supporting

Mentioning

207

Contrasting

Order By: Relevance

“…104) In fact, Bi 2 Te 2 Se was the first 3D TI material to present a reasonably bulk-insulating behavior, which opened the door for detailed transport studies of the topological surface state. This discovery by Ren et al was followed by an independent report by Xiong et al, 105) who reported an even larger resistivity of 6 cm. Detailed defect chemistry in Bi 2 Te 2 Se was discussed by Jia et al 106) In passing, a tetradymite compound having a similar chalcogen-ordered structure, Sb 2 Te 2 Se, has also been confirmed to be topological, 102) but it is heavily p-type doped.…”

Section: Three-dimensional Tismentioning

confidence: 83%

Topological Insulator Materials

2013

View full text Add to dashboard Cite

Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.

show abstract

Section: Three-dimensional Tismentioning

confidence: 83%

Topological Insulator Materials

2013

View full text Add to dashboard Cite

show abstract

“…[8][9][10][11] Therefore, various attempts have been made to control the Fermi energy and reduce the bulk carrier number and conductivity resulting in a semiconducting (insulating) temperature dependence of the resistivity from bulk electronic states and extending the study of binary bismuth chalcogenides to the ternary compound, Bi 2 Te 2 Se. [12][13][14] The controlled removal of excess electrons was achieved by Sn doping and Bi excess in Bi 2 Te 2 Se. 15 Bi 2 Se 2 Te was theoretically predicted as a topological insulator 16 and recent experiments have shown the characteristic topological features in the band structure and in transport measurements 17,18 In these experimental studies, the Fermi energy was located in the bulk band gap, well above the Dirac point, implying negative charge carriers (electrons) confirmed by Hall measurements.…”

mentioning

confidence: 99%

Shubnikov–de Haas oscillations from topological surface states of metallicBi2Se2.1Te0.9

et al. 2014

View full text Add to dashboard Cite

We have studied the quantum oscillations in the conductivity of metallic, p-type Bi2Se2.1Te0.9. The dependence of the oscillations on the angle of the magnetic field with the surface as well as the Berry phase determined from the Landau level fan plot indicate that the observed oscillations arise from surface carriers with the characteristic Dirac dispersion. Several quantities characterizing the surface conduction are calculated employing the Lifshitz-Kosevich theory. The low value of the Fermi energy with respect to the Dirac point is consistent with the metallic character of the bulk hole carriers. We conclude that, due to the peculiar shape of the valence band, the Shubnikov-de Haas oscillations of the bulk carriers are shifted to higher magnetic fields which allows for the detection of the quantum oscillations from the topological surface states at lower field.

show abstract

“…Bi 2 Te 2 Se has emerged as one of the most promising TIs due to its simple surface band structure, large bulk band gap and low bulk contribution to the total charge transport 16,20,21 . Our Bi 2 Te 2 Se films grown by van der Waals epitaxy are sufficiently ordered to display Shubnikov-de Haas (SdH) oscillations which provide access to important quantities such as the cyclotron mass, the Fermi velocity or Fermi energy 23 .…”

mentioning

confidence: 99%

“…12,14 Moreover, the results of low temperature Hall measurements performed at different back gate voltages (see Supplementary Information), are consistent with the n-doped character of our samples. 20,21,22 . It is furthermore noteworthy that the Hall mobilities agree well with the values extracted from the SdH oscillations for -60V < V g < 20V (see Supplementary Information).…”

mentioning

confidence: 99%

Growth of High-Mobility Bi₂Te₂Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

et al. 2012

View full text Add to dashboard Cite

The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice vacancies. As exemplified by the topological insulator Bi 2 Te 2 Se, we show that via van der Waals epitaxial growth on thin BN substrates, the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiO x substrates, which enables the observation of well-developed Shubnikov-de Haas In contrast to the quantum Hall state, these boundary states are the result of strong spin-orbit coupling without any external magnetic field, such that time reversal symmetry is conserved and accordingly backscattering is forbidden. The unique combination of dissipation-less charge transport channels with intrinsic spin polarization renders TIs of strong interest for spintronic applications, including spin injection 4,5 or spin transfer torques 6 . In addition, they hold promise for novel and exciting fundamental effects, like the formation of magnetic monopoles 7 or Majorana fermions 8 .While theory predicts TIs to be perfect bulk insulators, in practice their charge transport properties are dominated by defects. In fact, a sizeable amount of point defects (vacancies or antisite defects) is commonly introduced during the crystal growth in case of the chalcogenides Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 and their alloys, which represent the currently most intensively studied three-dimensional (3D) TIs. The presence of such defects leads to strong bulk doping in these compounds 3,9,10 . Moreover, chemical reactions at the crystal surface have been documented to impart notable doping 11,12 . The bulk doping creates a quasi-metallic conduction channel parallel to the surface channels, rendering it difficult to unequivocally assign charge transport features to the topological protected surface states. Strategies that have been pursued to minimize the contribution of the bulk transport include compensation doping 13,14 , alloying of differently doped TIs 15,16 , or increasing the surface to bulk ratio by using ultra thin samples 17 . However, doping or alloying typically results in a concomitant drastic decrease in carrier mobility due to the introduction of defects. One possibility to avoid such decrease in the structural quality of the

show abstract

Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity ()

Cited by 174 publications

References 19 publications

Topological Insulator Materials

Topological Insulator Materials

Shubnikov–de Haas oscillations from topological surface states of metallicBi2Se2.1Te0.9

Growth of High-Mobility Bi₂Te₂Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

Contact Info

Product

Resources

About

Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity ()

Cited by 174 publications

References 19 publications

Topological Insulator Materials

Topological Insulator Materials

Shubnikov–de Haas oscillations from topological surface states of metallicBi2Se2.1Te0.9

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

Contact Info

Product

Resources

About

Growth of High-Mobility Bi₂Te₂Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy