Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.

Since their discovery, carbon nanotubes have attracted the attention of many a scientist around the world. This extraordinary interest stems from their outstanding structural, mechanical, and electronic properties. In fact, apart from being the best and most easily available one-dimensional (1D) model system, carbon nanotubes show strong application potential in electronics, scanning probe microscopy, chemical and biological sensing, reinforced composite materials, and in many more areas. While some of the proposed applications remain still a far-off dream, others are close to technical realization. Recent advances in the development of reliable methods for the chemical functionalization of the nanotubes provide an additional impetus towards extending the scope of their application spectrum. In particular, covalent modification schemes allow persistent alteration of the electronic properties of the tubes, as well as to chemically tailor their surface properties, whereby new functions can be implemented that cannot otherwise be acquired by pristine nanotubes.

Using high resolution transmission electron microscopy, we identify the specific atomic scale features in chemically derived graphene monolayers that originate from the oxidation-reduction treatment of graphene. The layers are found to comprise defectfree graphene areas with sizes of a few nanometers interspersed with defect areas dominated by clustered pentagons and heptagons. Interestingly, all carbon atoms in these defective areas are bonded to three neighbors maintaining a planar sp 2 -configuration, which makes them undetectable by spectroscopic techniques. Furthermore, we observe that they introduce significant in-plane distortions and strain in the surrounding lattice.

Electrical transport studies on graphene have been focused mainly on the linear dispersion region around the Fermi level and, in particular, on the effects associated with the quasiparticles in graphene behaving as relativistic particles known as Dirac fermions. However, some theoretical work has suggested that several features of electron transport in graphene are better described by conventional semiconductor physics. Here we use scanning photocurrent microscopy to explore the impact of electrical contacts and sheet edges on charge transport through graphene devices. The photocurrent distribution reveals the presence of potential steps that act as transport barriers at the metal contacts. Modulations in the electrical potential within the graphene sheets are also observed. Moreover, we find that the transition from the p- to n-type regime induced by electrostatic gating does not occur homogeneously within the sheets. Instead, at low carrier densities we observe the formation of p-type conducting edges surrounding a central n-type channel.