Low-carrier-concentration crystals of the topological insulator Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Te<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Se

Jia, Shuang; Ji, Huiwen; Climent‐Pascual, Esteban; Fuccillo, M. K.; Charles, M. E.; Xiong, Junlin; Ong, N. P.; Cava, R. J.

doi:10.1103/physrevb.84.235206

Cited by 153 publications

(250 citation statements)

References 22 publications

(45 reference statements)

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“…This discovery by Ren et al was followed by an independent report by Xiong et al, 105) who reported an even larger resistivity of 6 cm. Detailed defect chemistry in Bi 2 Te 2 Se was discussed by Jia et al 106) In passing, a tetradymite compound having a similar chalcogen-ordered structure, Sb 2 Te 2 Se, has also been confirmed to be topological, 102) but it is heavily p-type doped.…”

Section: Three-dimensional Tismentioning

confidence: 99%

Topological Insulator Materials

2013

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Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.

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Section: Three-dimensional Tismentioning

confidence: 99%

Topological Insulator Materials

2013

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“…The high initial doping of the film is probably due to defects produced in growth, which is common in MBE growth of Bi 2 Se 3 films as well as bulk synthesized crystals. The mixed compound Bi 2 Te 2 Se has been found to be a more insulating material [32], and hence may respond better to our gating scheme.…”

Section: (B))mentioning

confidence: 99%

Scanning tunneling microscopy of gate tunable topological insulator Bi2Se3thin films

Zhang

Levy

et al. 2013

Phys. Rev. B

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Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains challenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in-situ molecular beam epitaxy growth of Bi 2 Se 3 films on SrTiO 3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by ≈250 meV on a 3 nm thick Bi 2 Se 3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.

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“…In contrast to compounds used in thermoelectrics, single crystals with control over the charge carrier density are needed to study the topological effects. In Bi 2 Se 3 and Bi 2 Te 3 , however, the defect chemistry is rather hard to control: Bi 2 Se 3 is n-doped due to charged Se vacancies, whereas Bi 2 Te 3 can be n-or p-doped due to antisite defects [71] and therefore the undoped samples naturally show metallic transport properties. Recently, samples of Bi 2 Te 2 Se [71,72], (Bi 1-x Sb x ) 2 Te 3 [73,74] or Bi 2 Te 1.6 S 1.4 [75] have been grown, which exhibit better bulk-insulating properties, making it possible to study the transport of surface states without the influences of the bulk.…”

Section: Filled Skutteruditesmentioning

confidence: 99%

Topological insulators and thermoelectric materials

Müchler

Casper

Yan

et al. 2012

Physica Rapid Research Ltrs

185

137

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Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes were both good thermoelectric properties and topological insulators can be found.Comment: Phys. Status Solidi RRL, accepte

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Low-carrier-concentration crystals of the topological insulator Bi2Te2Se

Cited by 153 publications

References 22 publications

Topological Insulator Materials

Topological Insulator Materials

Scanning tunneling microscopy of gate tunable topological insulator Bi2Se3thin films

Topological insulators and thermoelectric materials

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