Topological insulators and thermoelectric materials

Müchler, Lukas; Casper, F.; Yan, Binghai; Chadov, Stanislav; Felser, Claudia

doi:10.1002/pssr.201206411

Cited by 185 publications

(143 citation statements)

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“…There already exist some published review papers about TE and TIs, which focus on describing compound classes, 24 or discussing typical TE properties of TIs with gapless boundary states. 25 It is well known that in TI nanostructures, the boundary states from opposite sides are able to overlap in real space and get hybridized with each other.…”

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confidence: 99%

“…Thus, the two kinds of transport can be effectively decoupled, realizing the "phononglass, electron-crystal" concept and improved TE performance in TIs. 24,[27][28][29] As the thickness of TI films or the radius of TI nanowires decreases to the order of the localization width of boundary states, a hybridization gap opens at the DP. [30][31][32] The appearance of a hybridization gap is advantageous for the Seebeck effect but partly destroys the topological protection of the boundary states.…”

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Topological insulators for thermoelectrics

2017

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Topological insulators demonstrate tremendous potential in fields of electronics and magnetism for their unique boundary states that are topologically protected against backscattering at non-magnetic impurities and defects. Intriguingly, most topological insulators are also excellent thermoelectric materials, since topological insulator and thermoelectric compounds share similar material features, such as heavy elements and narrow band gaps. While the influence of topological insulator boundary states has long been neglected in early thermoelectric research, recently this neglected issue has attracted intensive research efforts. A lot of theoretical and experimental investigations have emerged to explore the contribution of topological insulator boundary states to thermoelectricity. Here, we will review the most updated theoretical and experimental progresses, trying to offer a comprehensive understanding on the relation between thermoelectric properties and topological nature. Special emphasis will be laid on the potential of topological states for improving thermoelectric properties, to pave a new way of realizing high-performance thermoelectric devices.

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Topological insulators for thermoelectrics

2017

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“…Five experimental papers [1][2][3][4][5] overview the recent status and challenges of TI nanostructures [1], magnetotransport and induced superconductivity [2], chemistry of Bi-based TI materials [3], molecular beam epitaxial growth of TI thin films [4], and angle-resolved photoemission spectroscopy (ARPES) with circular dichroism [5]. On the other hand, five theoretical papers [6][7][8][9][10] report the progress from different perspectives: materials design by firstprinciples calculations [6,7], the relations between TIs and thermoelectric materials [8], Floquet TIs [9], and the classification of topological states [10].…”

Section: Topological Insulatorsfrom Materials Design To Realitymentioning

confidence: 99%

Topological Insulators – From Materials Design to Reality

Yan

Felser

Zhang³

2013

Physica Rapid Research Ltrs

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Topological insulators (TIs) are a new quantum state of matter discovered in recent years. They are beyond the spontaneous symmetry-breaking description by Landau and are instead characterized by topological invariants, and described by topological field theory. Their topological nature is similar to the quantum Hall effect, a major discovery of condensed-matter physics in the 1980s (Klaus von Klitzing, Nobel Prize in Physics, 1985). The manifestation of the topological effect is the existence of robust gapless surface states inside the bulk energy gap. The topological surface states exhibit Dirac-cone-like energy dispersion with strong spin-momentum locking. Potential future applications cover areas such as spintronics, thermoelectrics, quantum computing and beyond.It is remarkable that TIs have been realized in many common materials, without the requirement of extreme conditions such as high magnetic field and low temperature. The first TI was predicted in 2006 and experimentally realized in 2007 in HgTe quantum wells. Soon afterwards, three traditionally well-known binary chalcogenides, Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 , were predicted and observed to be TIs with a large bulk gap and a metallic surface state consisting of a single Dirac cone. The discovery of these topological materials opened up the exciting field of topological insulators. Extensive experimental and theoretical efforts are devoted to synthesizing and optimizing samples, characterizing the topological states by surface sensitive spectroscopy, transport measurements, device fabrications, and searching for new material candidates.The field of TIs is now expanding at a rapid pace in the communities of physics, chemistry and materials science. In this Focus Issue, we intend to present a highquality snapshot of the materials and applications aspect of this field.We present ten Review papers from both experiment and theory aspects. Five experimental papers [1][2][3][4][5] We present ten Letters that cover various aspects, ranging from ARPES, transport measurement and devices, thin film growth to first-principles simulations and fundamental theory. Letters on ARPES [11][12][13][14] [18] shows the dependence of edge state dispersion on edge geometry of graphene. Last but not the least, two papers on phenomenological models [19,20] report the maximally localized flat-band Hamiltonians and the spectra flow for Aharonov-Bohm rings, respectively.We hope that this Focus Issue will be helpful for your research and stimulate more activity in the exciting field of topological insulators.

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“…Leaping to present content, a Focus Issue on Topological Insulators -From Materials Design to Reality [1] with Guest Editors Claudia Felser, Shoucheng Zhang, and Binghai Yan will kick-off Volume 7 of the journal pss (RRL). Nine Review@ RRL overview articles on various aspects of this vibrating and quickly expanding fi eld cover, for example, nanostructures [2] and the connection between topological insulators and thermoelectric materials [3]. They are complemented by a similar number of Rapid Research Letter contributions with brand new results.…”

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confidence: 99%