We introduce a new continuous-variable quantum key distribution (CV-QKD) protocol, self-referenced CV-QKD, that eliminates the need for transmission of a high-power local oscillator between the communicating parties. In this protocol, each signal pulse is accompanied by a reference pulse (or a pair of twin reference pulses), used to align Alice's and Bob's measurement bases. The method of phase estimation and compensation based on the reference pulse measurement can be viewed as a quantum analog of intradyne detection used in classical coherent communication, which extracts the phase information from the modulated signal. We present a proof-of-principle, fiber-based experimental demonstration of the protocol and quantify the expected secret key rates by expressing them in terms of experimental parameters. Our analysis of the secret key rate fully takes into account the inherent uncertainty associated with the quantum nature of the reference pulse(s) and quantifies the limit at which the theoretical key rate approaches that of the respective conventional protocol that requires local oscillator transmission. The self-referenced protocol greatly simplifies the hardware required for CV-QKD, especially for potential integrated photonics implementations of transmitters and receivers, with minimum sacrifice of performance. As such, it provides a pathway towards scalable integrated CV-QKD transceivers, a vital step towards large-scale QKD networks.

Time-resolved differential transmission measurements of self-assembled In0.4Ga0.6As quantum dots clearly indicate a phonon bottleneck between the n = 2 and n = 1 electronic levels. The key to this observation is the generation of electrons in dots where there are no holes so that electron-hole scattering does not mask the bottleneck. We use a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offer arguments to rule out other possible sources of the signal.

Photonic integrated circuits (PICs) provide a compact and stable platform for quantum photonics.Here we demonstrate a silicon photonics quantum key distribution (QKD) transmitter in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 950 kbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 106 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate PICs as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.Quantum key distribution (QKD) remains the only quantum-resistant method of sending secret information at a distance [1,2]. The first QKD system ever devised used polarization of photons to encode information [3,4]. QKD has since progressed rapidly to several deployed systems that can reach point-to-point secret key generation rates in the upwards of 100 kbps [5][6][7][8] and to other photonic degrees of freedom: time [9][10][11][12], frequency [13][14][15][16], phase [17], quadrature [18][19][20][21], and orbital angular momentum [22]. While polarization remains an attractive choice for free-space QKD due to its robustness against turbulence [23][24][25][26][27][28], polarization is commonly thought to be unstable for fiber-based QKD. For this reason, there has been a strong interest in translating the polarization QKD components into photonic integrated circuits (PICs), which provide a compact and phase-stable platform capable of correcting for polarization drifts in the channel. Recently, silicon-based polarization QKD transmitters were used for laboratory QKD demonstrations [29,30], but their performance advantage over standard telecommunication components has yet to be demonstrated. Here we report the first field tests using high-speed silicon photonics-based transmitter for polarization-encoded QKD.The silicon photonics platform allows for the integration of multiple high-speed photonic operations into a single compact circuit [31][32][33][34]. Operating at gigahertz bandwidth, a silicon photonics polarization QKD transmitter can correct for polarization drifts with typical millisecond time scales in a metropolitan-scale fiber link. Furthermore, silicon nanophotonic devices are compatible with the existing complementary metal-oxidesemiconductor (CMOS) processes that have enabled monolithic integration of photonics and electronics, possibly leading to future widespread utilization of QKD.The QKD transmitter demonstrated here is manufactured using a CMOS-compatible process. The trans-mitter combines a 10-Gbps Mach-Zehnder Modulator (MZM) with interleaved grating couplers, which convert the polarization of a photon in an optical fiber into the path the photon takes in the integrated circuit, and vice versa. The high-speed polarization control is enabled by electro-optic carrier depletion modulation withi...

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The optical properties of single InAs∕GaAs quantum dots (QDs) were studied as a function of their distance from the air∕GaAs interface. A short-period superlattice structure allows us to controllably shorten the distance between the QDs and the surface in 6-nm steps. The QD luminescence intensity and lifetime measurements show that quantum tunneling effect results in a sharp reduction in fluorescence efficiency and lifetime when the wetting-layer–surface distance is within 9 nm. For distances between 15 and 40 nm, broadening of the photoluminescence linewidths of single QDs was observed. Since exciton recombination time and efficiency are in this case unchanged with respect to bulk QDs, the observed line broadening is most likely due to dephasing or spectral diffusion processes.

We have used two-and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection.

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We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.