Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

Abstract

Articles you may be interested inGrowth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientNarvaez1, Bester2, Zunger3 2006Phys. Rev. B

“…1(d)]. Thermal depopulation has been found to be significant at temperatures T > 100 K. 29,41,42 However, Heitz and co-workers have found the onset to be 200 K. 43 In ndoped InAs/GaAs dots, Bras and co-workers showed that thermal depopulation becomes significant above 70 K (Ref. 6).…”

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

“…The out-scattering of charge-carriers thus becomes more probable at elevated charge-carrier temperatures [URA02,ROS09a]. Note that in the derivation of above expressions, only a quasi-equilibrium within the quantum well must be assumed without making assumptions about the quantum-dot occupations.…”

Quantum Dot Long-Wavelength Detectors

“…Despite such challenges, QDJPs are expected to perform better at higher temperatures, especially when compared to QWIPs, due to the increased intersubband relaxation time between the phonon-decoupled ground state and excited states, increasing the probability that a photoexcitcd carrier will be collected as photocurrent [9,[18][19][20]. This long intersubband relaxation time in quantum dots results from the existence of a "phonon bottleneck" that prevents electron relaxation by a single phonon emission.…”

“…Since, intersubband relaxation in quantum dots occurs by a multi-phonon event, which requires the satisfaction of a stringent resonant condition, this process is very slow (>1 ns). Differential transmission spectroscopy (DTS) [20,22] and high-frequency electrical impedance (HFEI) measurements [21] on lnt. 4 GaO.…”