Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

Bhattacharya, P.; Ghosh, Siddhartha Sankar; Pradhan, S. Sandeep; Singh, Jasprit; Wu, Zhiyuan; Urayama, Junji; Kim, Kyoungsik; Norris, Theodore B.

doi:10.1109/jqe.2003.814374

Cited by 166 publications

(106 citation statements)

References 43 publications

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“…Differential gain and linewidth enhancement factor are studied in [17,18]. The influence of the P-doping and tunneling injection on the modulation response of quantum dot lasers are studied in [2,19]. Impacts of gain compression factor on dynamic and static characteristics quantum dot laser are presented in [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

et al. 2016

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This paper investigates the influence of gain compression factor on the modulation response of InGaAs/GaAs self-assembled quantum dot laser based on rate equations. For different gain compression factors the output power-current characteristics, light emissions of quantum dot laser have been simulated and effect of gain compression factor changes on quantum dot laser is illustrated. Also, small and large-signal response of quantum dot lasers is studied and the impact of the gain compression factor is presented. It explains that increase of gain compression factor, decreases small-signal modulation characteristics, nevertheless, improves large-signal response of quantum dot lasers. It helps to generate better laser signal quality, higher eye and smaller jitter. The large-signal behavior of a laser diode determines its capability for digital data transfer. The modulation speed of quantum dot lasers is of specific importance if such lasers are considered for optical communication systems.

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Section: Introductionmentioning

confidence: 99%

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

et al. 2016

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“…Our measured value is approximately an order of magnitude smaller. 28,29 We believe that the relatively large value of J th measured here, compared to typical values $200 A/cm 2 for GaAs-based quantum well devices, 26 can be attributed to the smaller differential gain, a smaller gain coefficient due to the polarization field induced reduction of the electron-hole overlap in the disks ($0.3-0.4), 30,31 and the low quantum efficiency. Nonetheless, this demonstration opens the doors for improvement in performance of a truly monolithic electrically pumped laser on (001)Si.…”

Section: à2mentioning

confidence: 56%

“…33 The increase of s r with temperature, seen in Fig. 2(d), is a trend characteristic of quantum dots 29,32,34 and is not observed for bulk semiconductors, quantum wells, or quantum wires. In these materials, s r generally remains unchanged with temperature.…”

Section: à2mentioning

confidence: 86%

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Hazari

Aiello

et al. 2015

Applied Physics Letters

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III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

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“…Over the past 15 years there has been intense research on quantum dots (QDs) and the associated growth conditions [1], [2], [3] and [4], due to their potential for improved optoelectronic components, such as lasers [5], [6] and [7], semiconductor optical amplifiers [8] and quantum dot infrared photodetectors (QDIP) [9] and [10]. Important advantages of QD lasers are reduced threshold currents and higher temperature stability, while the main advantages of QDIPs, when compared to quantum well infrared photodetectors (QWIPs), are reduced dark current and the possibility to detect radiation at normal incidence.…”

Section: Introductionmentioning

confidence: 99%

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Höglund

Petrini

Asplund

et al. 2006

Applied Surface Science

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A route towards optimisation of uniformity and density of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy (MOVPE) through successive variations of the growth parameters is reported. It is demonstrated that a key parameter in obtaining a high density of quantum dots is the V/III ratio, a fact which was shown to be valid when either AsH 3 (arsine) or tertiary-butyl-arsine (TBA) were used as group V precursors. Once the optimum V/III ratio was found, the size distribution was further improved by adjusting the nominal thickness of deposited InAs material, resulting in an optimum thickness of 1.8 monolayers of InAs in our case. The number of coalesced dots was minimised by adjusting the growth interruption time to approximately 30 s. Further, the uniformity was improved by increasing the growth temperature from 485 °C to 520 °C. By combining these optimised parameters, i.e. a growth temperature of 520 °C, 1.8 monolayers InAs thickness, 30 s growth stop time and TBA as group V precursor, a full-width-half-maximum (FWHM) of the low temperature luminescence band of 40 meV was achieved, indicating a narrow dot size distribution.

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Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

Cited by 166 publications

References 43 publications

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

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