A stable perovskite heterojunction was constructed for inverted solar cells through surface sulfidation of lead (Pb)–rich perovskite films. The formed lead-sulfur (Pb-S) bonds upshifted the Fermi level at the perovskite interface and induced an extra back-surface field for electron extraction. The resulting inverted devices exhibited a power conversion efficiency (PCE) >24% with a high open-circuit voltage of 1.19 volts, corresponding to a low voltage loss of 0.36 volts. The strong Pb-S bonds could stabilize perovskite heterojunctions and strengthen underlying perovskite structures that have a similar crystal lattice. Devices with surface sulfidation retained more than 90% of the initial PCE after aging at 85°C for 2200 hours or operating at the maximum power point under continuous illumination for 1000 hours at 55° ± 5°C.
Organic-inorganic perovskite solar cells have recently emerged at the forefront of photovoltaics research. Here, for the first time, graphdiyne (GD), a novel two dimension carbon material, is doped into PCBM layer of perovskite solar cell with an inverted structure (ITO/PEDOT:PSS/CH3NH3PbI(3-x)Cl(x)/PCBM:GD/C60/Al) to improve the electron transport. The optimized PCE of 14.8% was achieved. Also, an average power conversion efficiency (PCE) of PCBM:GD-based devices was observed with 28.7% enhancement (13.9% vs 10.8%) compared to that of pure PCBM-based ones. According to scanning electron microscopy, conductive atomic force microscopy, space charge limited current, and photoluminescence quenching measurements, the enhanced current density and fill factor of PCBM:GD-based devices were ascribed to the better coverage on the perovskite layer, improved electrical conductivity, strong electron mobility, and efficient charge extraction. Small hysteresis and stable power output under working condition (14.4%) have also been demonstrated for PCBM:GD based devices. The enhanced device performances indicated the improvement of film conductivity and interfacial coverage based on GD doping which brought the high PCE of the devices and the data repeatability. In this work, GD demonstrates its great potential for applications in photovoltaic field owing to its networks with delocalized π-systems and unique conductivity advantage.
A new zwitterionic conjugated polyelectrolyte without free counterions has been used as an electron injection material in polymer light-emitting diodes. Both the efficiency and maximum brightness were considerably improved in comparison with standard Ca cathode devices. The devices showed very fast response times, indicating that the improved performance is, in addition to hole blocking, due to dipoles at the cathode interface, which facilitate electron injection.
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