This paper describes a comprehensive nonlinear multiphysics model based on the Euler-Bernoulli equation that remains valid up to large displacements in the case of electrostatically actuated nanocantilevers. This purely analytical model takes into account the fringing field effects which are significant for thin resonators. Analytical simulations show very good agreement with experimental electrical measurements of silicon nanodevices using wafer-scale nanostencil lithography (nSL), monolithically integrated with CMOS circuits. Close-form expressions of the critical amplitude are provided in order to compare the dynamic ranges of NEMS cantilevers and doubly clamped beams. This model allows designers to cancel out nonlinearities by tuning some design parameters and thus gives the possibility of driving the cantilever beyond its critical amplitude. Consequently, the sensor performance can be enhanced by being optimally driven at very large amplitude, while maintaining linear behavior.

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We present a time-resolved study of the evaporation in air of minuscule sessile droplets deposited by nanodispensing techniques. Highly sensitive nanomechanical resonators are designed to monitor in time the mass variation of evaporating liquid droplets. The precision of the measurement setup enables the study of droplets with diameters in the 1 mum range, which correspond to volumes of femtoliters and smaller, 9 orders of magnitude smaller than most of presently published data. Experimental data are compared with macroscopic models.

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3-D sequential integration stands out from other 3-D schemes as it enables the full use of the third dimension. Indeed, in this approach, 3-D contact density matches with the transistor scale. In this paper, we report on the main advances enabling the demonstration of functional and performant stacked CMOS-FETs; i.e., wafer bonding, low temperature processes ( C) and salicide stabilization achievements. This integration scheme enables fine grain partitioning and thus a gain in performance versus cost ratio linked to separation of heterogeneous technologies on distinct levels. In this work, we will detail examples taking advantage of the unique 3-D contact pitch achieved with sequential 3-D.Index Terms-Low temperature process, molecular bonding, solid phase epitaxy, three-dimensional (3-D) integration, 3-D monolithic integration, 3-D sequential integration.

Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 µm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ∼2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10(-11) g cm(-2) Hz(-1), and their thickness resolution corresponds to approximately a thousandth of a monolayer.

This work demonstrates for the first time a VLSI-compatible nano/microfabricated, high-performance, portable multi-gas analyzer associating gas chromatography and NEMS resonators.

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