VLSI silicon multi-gas analyzer coupling gas chromatography and NEMS detectors

Arcamone, Julien; Niel, Antoine; Gouttenoire, V.; Petitjean, Marie; David, N.; Barattin, Régis; Matheron, Muriel; Ricoul, F.; Bordy, T.; Blanc, Henri; Ruellan, J.; Mercier, Denis; Pereira-Rodrigues, N.; Costa, Guillaume; Agache, Vincent; Hentz, Sébastien; Gabriel, Jean‐Christophe P.; Baleras, F.; Marcoux, C.; Ernst, T.; Duraffourg, Laurent; Colinet, Éric; Myers, E.; Roukes, M. L.; Andreucci, Philippe; Ollier, E.; Puget, Pierre

doi:10.1109/iedm.2011.6131637

Cited by 24 publications

(23 citation statements)

References 7 publications

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“…Allan deviation results of the two transduction schemes are presented Figure 5, with integration times in a range of practical use for most applications. They are following a  --1/2 power law, in agreement with equation (11). This shows that white noise processes are dominant over this whole range of integration times.…”

Section: Resonance Measurementssupporting

confidence: 85%

High frequency top-down junction-less silicon nanowire resonators

et al. 2013

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We report here the first realization of top-down silicon nanowires (SiNW) transduced by both junctionless field effect transistor (FET) and the piezoresistive (PZR) effect. The suspended SiNWs are among the smallest top-down SiNWs reported to date, featuring widths down to ~20nm. This has been achieved thanks to a 200mm-wafer-scale, VLSI process fully amenable to monolithic CMOS cointegration. Thanks to the very small dimensions, the conductance of the silicon nanowire can be controlled by a nearby electrostatic gate. Both the junction-less FET and the previously demonstrated PZR transduction have been performed with the same SiNW. These self-transducing schemes have shown similar signal-to-background ratios, and the PZR transduction has exhibited a relatively higher output signal. Allan deviation ( A ) of the same SiNW has been measured with both schemes, and we obtain  A~2 0ppm for the FET detection and  A~3 ppm for the PZR detection at room temperature and low pressure. Orders of magnitude improvements are expected from tighter electrostatic control via changes in geometry and doping level, as well as from CMOS integration. The compact, simple topology of these elementary SiNW resonators opens up new paths towards ultra-dense arrays for gas and mass sensing, time keeping or logic switching systems in SiNW-CMOS platform.2

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Section: Resonance Measurementssupporting

confidence: 85%

High frequency top-down junction-less silicon nanowire resonators

et al. 2013

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“…Therefore, they represent excellent candidates as detectors for mass spectrometry [30], [31] and gas sensing [32]. Recently, VLSI compatible nano/micro-fabricated, high-performance, portable multi-gas analyzers associating gas chromatography and NEMS resonators [33] were reported, confirming NEMS high potentiality.…”

Section: B 3-d Sequential Integration Of Sensorsmentioning

confidence: 98%

3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS

Batude

Ernst

Arcamone

et al. 2012

IEEE J. Emerg. Sel. Topics Circuits Syst.

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3-D sequential integration stands out from other 3-D schemes as it enables the full use of the third dimension. Indeed, in this approach, 3-D contact density matches with the transistor scale. In this paper, we report on the main advances enabling the demonstration of functional and performant stacked CMOS-FETs; i.e., wafer bonding, low temperature processes ( C) and salicide stabilization achievements. This integration scheme enables fine grain partitioning and thus a gain in performance versus cost ratio linked to separation of heterogeneous technologies on distinct levels. In this work, we will detail examples taking advantage of the unique 3-D contact pitch achieved with sequential 3-D.Index Terms-Low temperature process, molecular bonding, solid phase epitaxy, three-dimensional (3-D) integration, 3-D monolithic integration, 3-D sequential integration.

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“…One step towards real-world systems has been performed with the use of VLSI silicon individual devices specifically designed for real-time mass sensing and multi-gas analysis systems [3][4]. This extreme sensitivity comes at the cost of an extremely reduced proportion of the resonant area versus the inactive regions (around 10 -4 ): the capture cross-section becomes extremely small, making the detection of a molecule highly unlikely.…”

Section: Introductionmentioning

confidence: 99%

“…Due to their miniscule size and low mass, nanomechanical systems (NEMS) have established record limits of detection, in particular in mass [1][2] and gas [3] sensing thanks to great progress in transduction. One step towards real-world systems has been performed with the use of VLSI silicon individual devices specifically designed for real-time mass sensing and multi-gas analysis systems [3][4].…”

Section: Introductionmentioning

confidence: 99%

Frequency-addressed NEMS arrays for mass and gas sensing applications

Sage

Martin

Dupré

et al. 2013

2013 Transducers &Amp; Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems

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This paper reports the design, fabrication and characterization of NEMS resonator arrays along with their associated readout scheme enabling the probing of all the resonators within an array. The successful monitoring of arrays of 20 NEMS in both air and vacuum is presented and the significant advantage these arrays provide over individual resonators for mass and gas sensing is discussed.Arrays of 20, 49 and 100 resonators have been designed and characterized in terms of Signal to Background Ratio (SBR) of the NEMS frequency response and Allan Deviation (ADEV) for the frequency stability of the resonators. While probing an array in closed loop, mass additions onto the NEMS were simulated by electrostatically-induced frequency shifts. These shifts were applied simultaneously on the entire array to demonstrate the ability of this system to track the complete array in real time. On the other hand, a noise reduction at short integration times by a factor close to √N, where N is the number of resonators, has been obtained by averaging all the resonators' signal. The ability to control arrays of NEMS with a simplified routing and a reduced number of electrical connections is demonstrated and the great potential of NEMS arrays for gas and mass sensing applications is highlighted.

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VLSI silicon multi-gas analyzer coupling gas chromatography and NEMS detectors

Abstract: This work demonstrates for the first time a VLSI-compatible nano/microfabricated, high-performance, portable multi-gas analyzer associating gas chromatography and NEMS resonators.

Cited by 24 publications

References 7 publications

High frequency top-down junction-less silicon nanowire resonators

High frequency top-down junction-less silicon nanowire resonators

3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS

Frequency-addressed NEMS arrays for mass and gas sensing applications

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