Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (GaO) thin films using hexakis(dimethylamido)digallium [Ga(NMe)] with oxygen (O) plasma on Si(100). The use of O plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former GaO processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of GaO ALD and the lowest temperature to date for the ALD growth of GaO and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric GaO thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline β-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of GaO thin films and provides the means to deposit GaO upon thermally sensitive polymers like polyethylene terephthalate.
Polymer coatings are widely used to protect metals from corrosion. Coating adhesion to the base material is critical for good protection, but coatings may fail because of cathodic delamination. Most of the experimental studies on cathodic delamination use polymers to study the corrosion behavior under conditions where the interfacial chemistry at the metal(oxide)/polymer interface is not well-defined. Here, ultrathin linear and cross-linked poly(methyl methacrylate) [PMMA] coatings that are covalently bound to oxide-covered zinc via a silane linker have been prepared. For preparation, zinc was functionalized with vinyltrimethoxysilane (VTS), yielding a vinyl monomer-covered surface. These samples were subjected to thermally initiated free radical polymerization in the presence of methyl methacrylate (MMA) to yield surface-bound ultrathin PMMA films of 10-20 nm thickness, bound to the surface via Zn-O-Si bonds. A similar preparation was also carried out in the presence of different amounts of the cross-linkers ethylene glycol diacrylate and hexanediol diacrylate. Functionalized and polymer-coated zinc samples were characterized by infrared (IR) spectroscopy, secondary ion mass spectrometry (SIMS), ellipsometry, and X-ray photoelectron spectroscopy (XPS). Coating stability toward cathodic delamination has been evaluated by scanning Kelvin probe (SKP) experiments. In all cases, the covalently linked coatings show lower delamination rates of 0.02-0.2 mm h(-1) than coatings attached to the surface without covalent bonds (rates ∼10 mm h(-1)). Samples with a higher fraction of cross-linker delaminate slower, with rates down to 0.03-0.04 mm h(-1), compared to ∼0.3 mm h(-1) without cross-linker. Samples with longer hydrophobic alkyl chains also delaminate slower, with the lowest observed delamination rate of 0.028 mm h(-1) using hexanediol diacrylate. For the coatings studied here, delamination kinetics is not diffusion limited, but the rate is controlled by a chemical reaction. Several possibilities for the nature of this reaction are discussed; radical side reactions of the oxygen reduction are the most likely path of deadhesion.
Phenothiazines are redox-active, fluorescent molecules with potential applications in molecular electronics. Phosphonated phenylethynyl phenothiazine can be easily obtained in a four-step synthesis, yielding a molecule with a headgroup permitting surface linkage. Upon modifying hydroxylated polycrystalline zinc and iron, both covered with their respective native oxides, ultrathin organic layers were formed and investigated by use of infrared (IR) reflection spectroscopy, X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), contact angle measurement, and ellipsometry. While stable monolayers with upright oriented organic molecules were formed on oxide-covered iron, multilayer formation is observed on oxide-covered zinc. ToF-SIMS measurements reveal a bridging bidentate bonding state of the organic compound on oxide-covered iron, whereas monodentate complexes were observed on oxide-covered zinc. Both organically modified and unmodified surfaces exhibit reactive wetting, but organic modification makes the surfaces initially more hydrophobic. Cyclic voltammetry (CV) indicates redox activity of the multilayers formed on oxide-covered zinc. On the other hand, the monolayers on oxide-covered iron desorb after electrochemical modifications in the state of the oxide, but are stable at open circuit conditions. Exploiting an electronic coupling of phenothiazines to oxides may thus assist in corrosion protection.
The effect of the solvent on the formation of thiol self-assembled monolayers (SAMs) on oxide-covered, reactive metals is more involved than in the well-studied gold-thiol system. In this work, copper covered with a native oxide was modified with 1-octadecanethiol (ODT) in either tetrahydrofuran (THF) or ethanol. Infrared (IR) spectroscopy indicated the formation of crystalline chain packing of alkyl chains from both solvents. Surface coverage was approximately equal in both systems, with differences in tilt angles of the chains. A detailed analysis by X-ray photoelectron spectroscopy (XPS) showed the formation of Cu 2 S and copper-bound carbon when the adsorption was carried out in ethanol. This observation can be explained by the cleavage of the 1 C-S bond in ODT during adsorption. Based on the analogy of preparations, we reason that the solvation of ODT in ethanol must be such that it weakens the C-S bond in ODT, thus enabling the cleavage of this bond. Based on the evidence presented here, it is not possible to distinguish between surface solvation and bulk solvation.Electrochemical linear sweep voltammetry show that SAMs from both solvents have an enhancing protective effect compared to the native oxide layer. The results from this work show interesting possibilities for the preparation of adsorbed monolayers with chemical interaction to reactive metals, with some similarities to carbene-based SAMs.
Molecular engineering of seven closely related zinc ketoiminates, namely, [Zn(dapki)], [Zn(daeki)], [Zn(epki)], [Zn(eeki)], [Zn(mpki)], [Zn(meki)], and [Zn(pki)], leads to the optimisation of precursor thermal properties in terms of volatilisation rate, onset of volatilisation, reactivity and thermal stability. The influence of functional groups at the imine side chain of the ligands on the precursor properties is studied with regard to their viability as precursors for atomic layer deposition (ALD) of ZnO. The synthesis of [Zn(eeki)], [Zn(epki)] and [Zn(dapki)] and the crystal structures of [Zn(mpki)], [Zn(eeki)], [Zn(dapki)] and [Zn(pki)] are presented. From the investigation of the physico-chemical characteristics, it was inferred that all compounds are monomeric, volatile and exhibit high thermal stability, all of which make them promising ALD precursors. Compound [Zn(eeki)] is in terms of thermal properties the most promising Zn-ketoiminate. It is reactive towards water, possesses a melting point of 39 °C, is stable up to 24 days at 220 °C and has an extended volatilisation rate compared to the literature known Zn-ketoiminates. It demonstrated self-saturated, water assisted growth of zinc oxide (ZnO) with growth rates in the order of 1.3 Å per cycle. Moreover, it displayed a broad temperature window from T = 175-300 °C and is the first report of a stable high temperature (>200 °C) ALD process for ZnO returning highly promising growth rates.
Reduced tin dioxide/copper phthalocyanine (SnOx/CuPc) heterojunctions recently gained much attention in hybrid electronics due to their defect structure, allowing tuning of the electronic properties at the interface towards particular needs. In this work, we focus on the creation and analysis of the interface between the oxide and organic layer. The inorganic/organic heterojunction was created by depositing CuPc on SnOx layers prepared with the rheotaxial growth and vacuum oxidation (RGVO) method. Exploiting surface sensitive photoelectron spectroscopy techniques, angle dependent X-ray and UV photoelectron spectroscopy (ADXPS and UPS, respectively), supported by semi-empirical simulations, the role of carbon from adventitious organic adsorbates directly at the SnOx/CuPc interface was investigated. The adventitious organic adsorbates were blocking electronic interactions between the environment and surface, hence pinning energy levels. A significant interface dipole of 0.4 eV was detected, compensating for the difference in work functions of the materials in contact, however, without full alignment of the energy levels. From the ADXPS and UPS results, a detailed diagram of the interfacial electronic structure was constructed, giving insight into how to tailor SnOx/CuPc heterojunctions towards specific applications. On the one hand, parasitic surface contamination could be utilized in technology for passivation-like processes. On the other hand, if one needs to keep the oxide's surficial interactions fully accessible, like in the case of stacked electronic systems or gas sensor applications, carbon contamination must be carefully avoided at each processing step.
The cathodic delamination of poly(styrene) [PS] model coatings from oxide‐covered zinc has been evaluated by scanning Kelvin probe (SKP). Linear and acrylate cross‐linked PS model coatings covalently bound to zinc oxide via ZnOSi bonds have been prepared. PS was prepared by thermally initiated free radical polymerization in the presence of vinyltrimethoxy silane modified zinc. Cross‐linkers ethylene glycol diacrylate (EDA) and hexanediol diacrylate (HDA) were used in some preparations. Resulting polymers are 8–15 nm thick. PS model coatings show a delamination rate of only ≈20% of that of comparable poly(methyl methacrylate) [PMMA] samples. The slower cathodic delamination of PS is attributed to denser chain packing and higher amounts of hydrophobic moieties, leading to a reduction in penetration of corrosive species. As opposed to the situation in PMMA, the addition of HDA increases the delamination rate, due to its flexible chains and hydrophilic groups. The lowest delamination rate is observed in the presence of 25% EDA. Consequently, ester hydrolysis of acrylates accelerates delamination, it is however not the main factor in cathodic delamination of such thin model system.
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