Because dementia is a chronic debilitating disease, there are the issues of the difficulty in continuous long-term care and limited accessibility to medical service. We developed the telemedicine system for dementia patients and aimed to examine the acceptance, reliability, and clinical outcome of our telemedicine service. We established the Dementia Telemedicine Center in connection with two recipient sites in 1996. The reliability of the center, which provides telemedicine, tele-education, and telecounseling services, was tested by comparing assessment via our system with in-person assessment, and the clinical outcome was assessed by rating the changes of behavioral symptoms. There have been 140 registered patients for 2 years. The general acceptance of our system by the patients and caregivers was good, and the consistency rates between the assessment via our telemedicine system and in-person assessment ranged from 76% to 89%. A considerable proportion of dementia patients in nursing homes (46%) showed relative clinical improvements through our service. Our telemedicine system seems to be reliable and effective for the assessment and care of dementia patients. Our future direction is to promote our system as a core model of the home-based care system for dementia patients.
Bisethylacetoacetato Cu(II), referred to as Cu(etac)2, was synthesized and used as a novel metal-organic precursor to produce Cu films by PECVD processing. Cu(etac)2 is a nonfluoride compound that is solid at room temperature with reasonable volatility at 120–150 °C of 0.8 Torr. Effects of selected process variables on the characteristics of Cu film deposition were studied. Considered variables were plasma power, hydrogen flow rate, deposition time, substrate temperature, and precursor temperature. The process conditions to give Cu films of a high quality were determined. The electrical resistivity approached 2 μΩ · cm as the Cu film thickness became greater than 2500 Å. The conformality of the Cu film deposition by PECVD was sufficient to result in complete via-hole fillings of wafers patterned for 256 Mb DRAM.
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