Bis(alkyl
3-oxobutanoato)copper(II) compounds were synthesized and utilized to
deposit copper films, where alkyl = methyl, ethyl, 2-methoxyethyl,
tert-butyl, and benzyl. Copper films were deposited at
temperatures as low as 160 °C. They showed conformal coverage on
patterned substrates with holes of diameter as small as 0.35 μm and
aspect ratio as high as 3. Average grain size of the deposited
copper films depended on substrate temperature. The alkyl
3-oxobutanoate ligands liberated from the precursors analyzed to be
intact during the deposition
processes.
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