Preparation of CuInSe2 thin films through metal organic chemical vapor deposition method by using di-μ-methylselenobis(dimethylindium) and bis(ethylisobutyrylacetato) copper(II) precursors

Yoon, Seok Hwan; Seo, Kook Won; Lee, Seung Soo; Shim, Il-Wun

doi:10.1016/j.tsf.2006.04.054

Cited by 31 publications

(17 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…A variety of deposition techniques have been employed by the researchers for the preparation of CIS thin films, such as sputtering [2,9], electrodeposition [10,11], spray pyrolysis [12], hot wall deposition [13], thermal co-evaporation [14] [16].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Electron-Beam Evaporated Cu-InSe Thin Films Using Two Stage Processes

Islam¹,

Nuruzzaman²,

Roy³

et al. 2016

JPSA

View full text Add to dashboard Cite

CIS (Cu-InSe) thin films were prepared onto glass substrate by the two stage process-generally called bilayer process. At first, Cu layer was deposited onto glass substrate by electron beam evaporation technique and then InSe single layer was deposited on the resulting Cu layer to produce CIS thin film. XRD (X-ray diffraction) analysis revealed that deposited film has an amorphous nature. Electrical resistivity measurements were carried out as a function of temperature during heating and cooling cycles in air. The heating and cooling cycles of the sample are almost reversible after successive heat-treatment in air. In order to consider the influence of the InSe upper layer on the optical properties, the thickness of the InSe upper layer in the CIS films was varied from 50 to 150 nm. Analysis of the transmittance and reflectance spectra, recorded in the wavelength range of 400-1,100 nm, revealed that the CIS films have high absorption coefficient of ~10 4 cm -1 . The direct band gap varies from 1.40 to 1.22 eV. The refractive index, the extinction coefficient and the dielectric constant of the CIS films depend on the film thickness.

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Electron-Beam Evaporated Cu-InSe Thin Films Using Two Stage Processes

Islam¹,

Nuruzzaman²,

Roy³

et al. 2016

JPSA

View full text Add to dashboard Cite

show abstract

“…These films have been fabricated through a large variety of techniques [6][7][8][9][10][11][12][13][14] such as RF sputtering, 15 spray pyrolysis, [16][17][18] chemical deposition, 19 stacked elemental layer (SEL), [20][21][22] microwave-assisted solid-state reaction involving pure metal powders, 23 preparation of nanoparticles, 24 and metal organic chemical vapor deposition of organometallic precursors (MOCVD). [25][26][27] Among them, MOCVD offers several advantages; through this method, it is relatively easy to obtain high quality thin films with less impurities and uniform thickness and to control the stoichiometric ratio of relevant elements. 26 However, the success of the MOCVD process depends on the availability of highly volatile and thermally stable precursors since these thermal properties are important to achieve uniform thickness and reproducible film growth.…”

Section: Introductionmentioning

confidence: 99%

“…[25][26][27] Among them, MOCVD offers several advantages; through this method, it is relatively easy to obtain high quality thin films with less impurities and uniform thickness and to control the stoichiometric ratio of relevant elements. 26 However, the success of the MOCVD process depends on the availability of highly volatile and thermally stable precursors since these thermal properties are important to achieve uniform thickness and reproducible film growth. 27 We recently reported the preparation of CuInSe2 thin films through two-stage MOCVD process, using Cu-and In/Secontaining single source precursors.…”

Section: Introductionmentioning

confidence: 99%

“…27 We recently reported the preparation of CuInSe2 thin films through two-stage MOCVD process, using Cu-and In/Secontaining single source precursors. 26,28 As an In/Se precursor, di-µ-methylselenobis(dimethylindium) was used. 26 However, this In/Se precursor was quite air sensitive and difficult to handle.…”

Section: Introductionmentioning

confidence: 99%

“…26,28 As an In/Se precursor, di-µ-methylselenobis(dimethylindium) was used. 26 However, this In/Se precursor was quite air sensitive and difficult to handle. Therefore, we developed a stable In/Se precursors: tris(N,Nethylbuyldiselenocarbamato)Indium(III) 29 in ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Deposition of CuInSe₂Thin Films Using Stable Copper and Indium-selenide Precursors through Two-stage MOCVD Method

Park¹,

Kim

Park³

et al. 2009

Bulletin of the Korean Chemical Society

View full text Add to dashboard Cite

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 o C. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

show abstract

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Winter

Knisley

Kalutarage

et al. 2012

Encyclopedia of Inorganic and Bioinorganic Chemistry

View full text Add to dashboard Cite

This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

show abstract

Preparation of CuInSe2 thin films through metal organic chemical vapor deposition method by using di-μ-methylselenobis(dimethylindium) and bis(ethylisobutyrylacetato) copper(II) precursors

Cited by 31 publications

References 22 publications

Preparation and Characterization of Electron-Beam Evaporated Cu-InSe Thin Films Using Two Stage Processes

Preparation and Characterization of Electron-Beam Evaporated Cu-InSe Thin Films Using Two Stage Processes

Deposition of CuInSe₂Thin Films Using Stable Copper and Indium-selenide Precursors through Two-stage MOCVD Method

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Contact Info

Product

Resources

About

Preparation of CuInSe2 thin films through metal organic chemical vapor deposition method by using di-μ-methylselenobis(dimethylindium) and bis(ethylisobutyrylacetato) copper(II) precursors

Cited by 31 publications

References 22 publications

Preparation and Characterization of Electron-Beam Evaporated Cu-InSe Thin Films Using Two Stage Processes

Preparation and Characterization of Electron-Beam Evaporated Cu-InSe Thin Films Using Two Stage Processes

Deposition of CuInSe2Thin Films Using Stable Copper and Indium-selenide Precursors through Two-stage MOCVD Method

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Contact Info

Product

Resources

About

Deposition of CuInSe₂Thin Films Using Stable Copper and Indium-selenide Precursors through Two-stage MOCVD Method