Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Abstract

This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

Low Temperature Deposition of WNxCyDiffusion Barriers Using WN(NEt2)3as a Single-Source Precursor

“…To overcome these drawbacks, organometallic precursors have drawn considerable interest for metal-organic CVD (MOCVD). Typically, these complexes include nitrogen-bound moieties such as amido, imido, hydrazido, amidinate or guanidinate ligands, 13,14 and have been used in single-source or NH 3 /H 2 co-reacting conditions to deposit WN x . Unfortunately, many of these precursors still require relatively high deposition temperature (>350…”

New Chemical Precursors for the Growth of Ferroelectric and Mid-Valent Metal Oxide Films

“…We published a review article on metalorganic film growth precursors that were reported between 2005 and 2012. 4 This article appeared in "Encyclopedia of Inorganic and Bioinorganic Chemistry" in December 2012.…”

Volatile Iridium and Platinum MOCVD Precursors: Chemistry, Thermal Properties, Materials and Prospects for Their Application in Medicine

“…The use of oxygen as a gas-reagent for the production of metallic iridium has proven itself well in the case of liquid cyclopentadienyl complexes. When using the [Ir(cod)Cp Me ] precursor, pure coatings (<1 at.% C and O) are formed already at 270 • C [29,66]; however, the growth rate is low. The application of the special system of "liquid delivery" of the precursor using a tetrahydrofuran (THF) solution allows attainment of exceptionally high growth rates (up to 70 nm/min at 350 • C) [67].…”