New Chemical Precursors for the Growth of Ferroelectric and Mid-Valent Metal Oxide Films

Abstract

This proposal seeks to prepare improved chemical vapor deposition (CVD) and atomic layer deposition (ALD) precursors to materials that contain Sr, Ba, and Ti and ALD precursors for the mid-valent oxides MO (M = Mo, W), M2O3 (M = Nb, Ta, Mo, W), and MO2 (M = Nb, Ta, Mo, W). These new precursors will be evaluated in film growth trials of MTiO3 (M = Sr, Ba) and mid-valent metal oxide films. Specific objectives include the synthesis and characterization of Sr, Ba, and Ti precursors containing bis(pyrazolyl)methane-derived ligands and Nb(