No abstract

The atomic layer deposition (ALD) of Cu metal films was carried out by a two-step process with Cu(OCHMeCH 2 NMe 2 ) 2 and BH 3 (NHMe 2 ) on Ru substrates and by a three-step process employing Cu(OCHMeCH 2 NMe 2 ) 2 , formic acid, and BH 3 (NHMe 2 ) on Pd and Pt substrates. The two-step process demonstrated self-limited ALD growth at 150 °C with Cu(OCHMeCH 2 NMe 2 ) 2 and BH 3 (NHMe 2 ) pulse lengths of ≥3.0 and ≥1.0 s, respectively. An ALD window was observed between 130 and 160 °C, with a growth rate of about 0.13 Å/cycle. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed rough Cu films that likely originate from the Cu nanoparticle seed layer. The Cu films exhibited poor electrical conductivity because of their nanoparticulate natures. The three-step process showed self-limited ALD growth on Pd and Pt at 150 °C with Cu(OCHMeCH 2 NMe 2 ) 2 , formic acid, and BH 3 (NHMe 2 ) pulse lengths of ≥3.0, ≥ 0.3, and ≥1.0 s, respectively. ALD windows were observed between 135 and 165 °C on both Pd and Pt, with growth rates of 0.20 Å/cycle on both substrates. Plots of film thickness versus number of cycles showed linear growth behavior on Pd with a growth rate of 0.20 Å/cycle up to 2000 cycles. By contrast, a similar plot for growth on Pt revealed nonlinear growth behavior, with a growth rate of about 0.4 Å/cycle up to 500 cycles, and then a growth rate of about 0.03 Å/cycle between 500 and 2000 cycles. The large difference in growth behavior between Pd and Pt substrates is proposed to occur by formation of a Cu/Pd alloy film and continuous catalytic decomposition of the BH 3 (NHMe 2 ) by the surface Pd sites. By contrast, there is much less surface Pt in the growing Cu film, and catalytic decomposition of BH 3 (NHMe 2 ) by the diminishing surface Pt as the Cu film grows leads to a decreased growth rate beyond 500 cycles. X-ray photoelectron spectroscopy reveals the formation of high purity Cu metal for all depositions, with low levels of C, N, O, and B. The Cu films on Pd and Pt showed smooth, continuous films at all thicknesses and had low electrical resistivities.

Treatment of MCl2 (M = Cu, Ni, Co, Fe, Mn, Cr) with 2 equiv of α-imino alkoxide salts K(RR'COCNtBu) (R = Me, tBu; R' = iPr, tBu) afforded M(RR'COCNtBu)2 or [Mn(RR'COCNtBu)2]2 in 9-75% yields. These complexes combine volatility and high thermal stability and have useful atomic layer deposition (ALD) precursor properties. Solution reactions between Ni, Co, and Mn complexes showed that BH3(NHMe2) can reduce all to metal powders. ALD growth of Ni, Co, Fe, and Cr films is demonstrated. Mn film growth may be possible, but the films oxidize completely upon exposure to air.

Treatment of MCl2 (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the hydrazonate salts K(tBuNNCHCtBuO), K(tBuNNCHCiPrO), or K(tBuNNCMeCMeO) afforded the complexes M(tBuNNCHCtBuO)2 (M = Ni, 65%; Co, 80%; Fe, 83%; Mn, 68%; Cr, 64%), M(tBuNNCHCiPrO)2 (M = Ni, 63%; Co, 86%; Fe, 75%), and M(tBuNNCMeCMeO)2 (M = Ni, 34%; Co, 29%; Fe, 27%). Crystal structure determinations of Co(tBuNNCHCtBuO)2, M(tBuNNCHCiPrO)2 (M = Ni, Co), and M(tBuNNCMeCMeO)2 (M = Ni, Co, Fe) revealed monomeric complexes with tetrahedral geometries about the metal centers. To evaluate the potential of these new complexes as film growth precursors, preparative sublimations, thermogravimetric analyses, solid state decomposition studies, and solution reactions with reducing coreagents were carried out. M(tBuNNCHCtBuO)2 sublime between 120 and 135 °C at 0.05 Torr, whereas M(tBuNNCHCiPrO)2 and M(tBuNNCMeCMeO)2 sublime between 100 and 105 °C at the same pressure. All complexes afforded ≥96% recovery of sublimed material, with ≤3% of nonvolatile residues. The solid state decomposition temperatures were highest for M(tBuNNCHCiPrO)2 (273-308 °C), intermediate for M(tBuNNCHCtBuO)2 (241-278 °C), and lowest for M(tBuNNCMeCMeO)2 (235-250 °C). Treatment of Co(tBuNNCHCtBuO)2 in tetrahydrofuran with hydrazine, BH3(L) (L = NHMe2, SMe2, THF), pinacol borane, and LiAlH4 led to rapid formation of cobalt metal, while analogous reductions of Mn(tBuNNCHCtBuO)2 with BH3(THF), pinacol borane, and LiAlH4 appeared to afford manganese metal. The new complexes M(tBuNNCHCtBuO)2, M(tBuNNCHCiPrO)2, and M(tBuNNCMeCMeO)2 have very promising properties for use as precursors for the growth of the respective metals in atomic layer deposition film growth processes.

Treatment of first-row transition-metal MCl(2) (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the potassium 1,2,5-triazapentadienyl salts K(tBuNNCHCHNR) (R = tBu, NMe(2)) afforded M(tBuNNCHCHNR)(2) in 18-73% isolated yields after sublimation. The X-ray crystal structures of these compounds show monomeric, tetrahedral molecular geometries, and magnetic moment measurements are consistent with high-spin electronic configurations. Complexes with R = tBu sublime between 155 and 175 °C at 0.05 Torr and have decomposition temperatures that range from 280 to 310 °C, whereas complexes with R = NMe(2) sublime at 105 °C at 0.05 Torr but decompose between 181 and 225 °C. This work offers new nitrogen-rich ligands that are related to widely used β-diketiminate and 1,3,5-triazapentadienyl ligands and demonstrates new complexes with properties suitable for use in atomic-layer deposition.