Copper CVD Precursors Containing Alkyl 3-Oxobutanoate Ligands

Abstract

Bis(alkyl 3-oxobutanoato)copper(II) compounds were synthesized and utilized to deposit copper films, where alkyl = methyl, ethyl, 2-methoxyethyl, tert-butyl, and benzyl. Copper films were deposited at temperatures as low as 160 °C. They showed conformal coverage on patterned substrates with holes of diameter as small as 0.35 μm and aspect ratio as high as 3. Average grain size of the deposited copper films depended on substrate temperature. The alkyl 3-oxobutanoate ligands liberated from the precursors analyzed to be intact during the deposition processes.

1D Copper Nanostructures: Progress, Challenges and Opportunities

“…Interestingly, free‐standing CuNWs could be obtained by chemical vapour deposition (CVD) . The Cu(I)alkyl 3‐oxobutanate complexes (btac)CuL 2 where L is a Lewis base, were used as precursors since they can be isolated as stable, volatile liquids suitable for vapour deposition . The Cu(I)alkyl 3‐oxobutanoate complexes (btac)CuL 2 and (etac)CuL 2 where L = P(OMe) 3 and P(OEt) 3 were synthesized; the thermal stability of the complexes was in the order Cu(etac)[P(OEt) 3 ] 2 > Cu(etac)[P(OMe) 3 ] 2 > Cu(btac)[P(OEt) 3 ] 2 > Cu(btac)[P(OMe) 3 ][P(OEt) 3 ] > Cu(btac)[P(OMe) 3 ] 2 .…”

Trends in precursor design for conventional and aerosol‐assisted CVD of high‐Tc superconductors

“…Such ligands (R = Me and R' = Me, Et,tBu, C 2 H 4 OMe and CH 2 C 6 H 5 ) were recently used for the development of copper precursors with low decomposition temperatures. 90 We have selected methylpivaloylacetate (mpaH, R = tBu, R' = Me) as a ligand. 91 Cu(mpa) 2 was easily obtained by ligand exchange reactions using copper methoxide.…”

The investigation of a hydro-thermal method to fabricate Cu@C coaxial nanowires and their special electronic transport and heat conduction properties

“…Generally, the synthesis strategies of copper nanowires (Cu NWs) can be classified into three methods: physical methods, chemical methods and comprehensive methods. Commonly used preparation methods of copper nanowires are hydrothermal reduction, 3-6 electrochemical deposition (ECD), [7][8][9] chemical vapor deposition (CVD), [10][11][12] gas-liquidsolid growth (VLS), 13,14 organometallic chemical vapor deposition (MOCVD) [15][16][17] and enhanced direct-injection pyrolytic synthesis (e-DIPS) 18,19 combined with nanofilling technology as shown in Scheme 1. Probably the most widely used approach for the preparation of Cu nanocrystals is the template-directed electrochemical method, but nanowires fabricated by the electrochemical process are usually polycrystalline and growth of nanowires is vulnerable to defects and cracks of the templates.…”