Memtransistors that combine the properties of transistor
and memristor
hold significant promise for in-memory computing. While superior data
storage capability is achieved in memtransistors through gate voltage-induced
conductance modulation, the lateral device configuration would not
only result in high write bias, which compromises the power efficiency,
but also suffers from unsuccessful memory reset that leads to reliability
concerns. To circumvent such performance limitations, an advanced
physics-based model is required to uncover the dynamic resistive switching
behavior and deduce the key driving parameters for the switching process.
This work demonstrates a self-consistent physics-based model which
incorporates the often-overlooked effects of lattice temperature,
vacancy dynamics, and channel electrostatics to accurately solve the
interaction between gate potential, ions, and carriers on the memristive
switching mechanism. The completed model is carefully calibrated with
an ambipolar WSe2 memtransistor and hence enables the investigation
of the carrier polarity effect (electrons vs holes) on vacancy transport.
Nevertheless, the validity of the model can be extended to different
materials by a simple material-dependent parameter modification. Building
upon the existing understanding of Schottky barrier height modulation,
our study reveals three key insightsleveraging threshold voltage
shifts to lower write bias; optimizing lattice temperature distribution
and read bias polarity to achieve successful memory state recovery;
engineering contact work function to overcome the detrimental parasitic
current flow in short channel ambipolar memtransistors. Therefore,
understanding the significant correlation between the switching mechanisms,
different material systems, and device structures allows performance
optimization of operating modes and device designs for future memtransistors-based
computing systems.
We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained. V
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