Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure

Ghosh, Joydeep; Laha, Apurba; Saha, Dipankar; Ganguly, Swaroop

doi:10.1109/ulis.2017.7962588

Cited by 9 publications

(9 citation statements)

References 8 publications

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Section: Resultsmentioning

confidence: 99%

“…When the GaN cap thickness is further increased the valence band is shifted upwards to cross the Fermi level energy, and a 2D hole gas (2DHG) at the GaN/AlGaN interface is formed ( Figure 5). 7,8,18 In such a case, the generated holes at the GaN/AlGaN interface will act as an additional source contributing an equal density of electrons at the AlGaN/GaN interface. To derive analytical expressions for the modified 2DEG concentration and the BSBH, one must include the effect of the 2DHG in the continuity of displacement at the GaN cap/AlGaN interface equation and write…”

Section: Introductionmentioning

confidence: 99%

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Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

Ghosh

Saha

Ganguly

et al. 2018

Int J RF Microw Comput Aided Eng

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In this article, we present a physics‐based model to explain the effect of the GaN cap layers on the 2D electron gas density and the bare surface barrier height in AlGaN/GaN heterostructures. We consider that the 2DEG originates from the surface donor states present on the GaN cap top surface. The influence of a 2D hole gas, formed when the valence band crosses the Fermi energy level, has also been considered. This model agrees well with the published experimental results and TCAD simulations, and can easily be incorporated into the modeling of GaN/AlGaN/GaN‐based HEMT devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

Ghosh

Saha

Ganguly

et al. 2018

Int J RF Microw Comput Aided Eng

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“…In fact, the existence of such a high-density 2DHG in a GaN/AlGaN/GaN heterostructure is experimentally shown [32]. Modeling the effect of the 2DHG in a GaN/AlGaN/GaN is reported [33,34]. Again, Chen et al [26] have experimentally demonstrated a hole accumulation at the heterointerface due to a strong piezoelectric polarization effect in the InGaN/GaN heterostructure.…”

Section: Ingan Sp Sp Pementioning

confidence: 98%

“…The piezoelectric polarization charge is calculated from the corresponding piezoelectric coefficients, elastic constants, and bulk and strained lattice parameters respectively [1]. Here, e 33 and e 13 ( ¢ e 33 and ¢ e 13 ) denote piezoelectric coefficients of AlGaN (InGaN), and C 13 and C 33 ( ¢ C 13 and ¢ C 33 ) are the elastic constants of AlGaN (InGaN). The index a is used to denote the bulk lattice constant.…”

Section: Ingan Sp Sp Pementioning

confidence: 99%

“…Note that E F1 will be related to N st : = E F N D 1 st . One must solve equations (8) where m 0 is the electron rest mass [28,33], the term qD h d InGaN is evaluated to be in the order of 10 −9 F m −1 . As e is in the order of 10 Henceforth, the formation of a 2DHG will also modify the magnitude of the electric field F 1 , F 2 , and F 3 .…”

Section: Ingan Sp Sp Pementioning

confidence: 99%

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Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation

Ghosh

2018

J. Phys. Commun.

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An analytical model is presented to calculate the two-dimensional electron gas (2DEG) density and barrier height of bare surface AlGaN/AlN/InGaN/GaN double heterostructures, which use InGaN as the conducting layer. The basic model is derived from electrostatic analysis of the different material interfaces. The effect of strain relaxation in the InGaN layer is also incorporated here. Further, the impact of a two-dimensional hole gas at the InGaN/GaN interface, formed when the InGaN layer thickness is high, has been considered. The presented results are seen to agree with the available experimental results. Thus, this model can be a useful tool in the design and modeling of InGaN-based III-nitride heterostructures.

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Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

Huang,

He,

Yang

et al. 2023

J. Phys.: Conf. Ser.

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A novel vertical gallium nitride (GaN) junction field-effect transistor (JFET) is reported in this article. Through the setup of dual lateral heterojunction channels in the body, the current density is high while the p-type gallium nitride growth area can be adjusted to easily achieve enhanced mode. Based on the structure parameter settings in this article, through the device simulation software TCAD, and under the condition of selecting the appropriate p-type GaN growth region, the threshold voltage of the device is 1.1 V, the source output current density can reach 7.2 kA/cm2, the breakdown voltage is about 750 V, and the on-resistance is 0.52 mΩ·cm2. Finally, the test circuit is built, and the switching characteristics of the device proposed in this paper are simulated under the consideration of parasitic inductance.

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Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure

Cited by 9 publications

References 8 publications

Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation

Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

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