Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels
Hao Huang,
Wei He,
Jiaying Yang
et al.
Abstract:A novel vertical gallium nitride (GaN) junction field-effect transistor (JFET) is reported in this article. Through the setup of dual lateral heterojunction channels in the body, the current density is high while the p-type gallium nitride growth area can be adjusted to easily achieve enhanced mode. Based on the structure parameter settings in this article, through the device simulation software TCAD, and under the condition of selecting the appropriate p-type GaN growth region, the threshold voltage of the de… Show more
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