The state of application of atom probe tomography to electronic materials is assessed. The benefits and challenges of the technique are discussed with regard to its impact on this field of materials science. Specimen preparation in particular is emphasized as the key to success with modern atom probes. Electronic materials referenced in this paper include components of complementary metal/oxide/semiconductor (CMOS) structures, compound semiconductors, and thin films for data storage and general applications. Many examples from recent work are provided as illustrations of the types of information that can be derived and the impact this information can have on the research, development, processing, and failure analysis of electronic materials.

The performance of the pulsed-laser atom probe can be limited by both instrument and specimen factors. The experiments described in this article were designed to identify these factors so as to provide direction for further instrument and specimen development. Good agreement between voltage-pulsed and laser-pulsed data is found when the effective pulse fraction is less than 0.2 for pulsed-laser mode. Under the conditions reported in this article, the thermal tails of the peaks in the mass spectra did not show any significant change when produced with either a 10-ps or a 120-fs pulsed-laser source. Mass resolving power generally improves as the laser spot size and laser wavelength are decreased and as the specimen tip radius, specimen taper angle, and thermal diffusivity of the specimen material are increased. However, it is shown that two of the materials used in this study, aluminum and stainless steel, depend on these factors differently. A one-dimensional heat flow model is explored to explain these differences. The model correctly predicts the behavior of the aluminum samples, but breaks down for the stainless steel samples when the tip radius is large. A more accurate three-dimensional model is needed to overcome these discrepancies.

The first dedicated local electrode atom probes (LEAP [a trademark of Imago Scientific Instruments Corporation]) have been built and tested as commercial prototypes. Several key performance parameters have been markedly improved relative to conventional three-dimensional atom probe (3DAP) designs. The Imago LEAP can operate at a sustained data collection rate of 1 million atoms/minute. This is some 600 times faster than the next fastest atom probe and large images can be collected in less than 1 h that otherwise would take many days. The field of view of the Imago LEAP is about 40 times larger than conventional 3DAPs. This makes it possible to analyze regions that are about 100 nm diameter by 100 nm deep containing on the order of 50 to 100 million atoms with this instrument. Several example applications that illustrate the advantages of the LEAP for materials analysis are presented.

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The addition of a local electrode geometry has transformed the conventional atom probe into a high-speed, high sensitivity tool capable of mapping three-dimensional (3D) dopant atom distributions in nanoscale volumes of Si. Fields of view exceeding 100nm in diameter and collection rates exceeding 18×106at.∕h are possible with the local electrode geometry. The 3D evolution of dopants, specifically dopant clustering, grain-boundary segregation, shallow-doped B layers, Ni–Si layers, and preamorphization regions, was analyzed. A 200eV B11 implant in Ge-amorphized Si was mapped. The native surface oxide, 8-nm-deep B-doped layer, and Ge distribution were simultaneously mapped in 3D space. A subsequent Ni silicide process was analyzed to show Ni penetration through the doped layer. In a heavily doped poly-Si sample, a cluster of dimensions 2×7×8nm3 and containing 264 B atoms was identified at the intersection of three grains. This shows that annealing highly overdoped thin poly-Si layers does not facilitate uniformly doped and highly conductive gate contact layers for nanoscale complementary metal-oxide semiconductor transistors.