Laser pulsing of field evaporation in atom probe tomography

Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography

“…The influence of the irradiation conditions (e.g., the laser energy) on field evaporation is typically quite complex for non- metallic samples such as semiconductors [46,47]. Recent experiments have demonstrated that the efficiency of the laser pulse depends on the dc field for a semiconductor tip, in comparison with metallic samples where this dependence is not observed [48][49][50].…”

Influence of instrument conditions on the evaporation behavior of uranium dioxide with UV laser-assisted atom probe tomography

“…A pulsed electric field is the primary method for extraction of surface ions for electrically conductive materials, but materials with poor electrical conductivity, such as oxides, require a pulsed laser to assist in the removal of surface ions by thermal excitation [15]. Although recent investigations have explored the physical mechanisms of evaporation, questions still remain regarding the sample and laser interactions and the mechanisms that assist in ion evaporation in oxides [16][17][18][19][20][21].…”

Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates

“…It is worth noting that APT analysis of the stoichiometry of Table 1. Relaxed lattice parameters of the binaries AlN [42] and InN [43] and stiffness coefficients [43,44] III-nitride materials is significantly dependent on the parameters used in the APT experiment for reasons which are still under debate [35,[49][50][51][52]. Nevertheless, for the analysis of both In 1-y Ga y N and Al 1−x In x N, the measured fraction of metallic sites occupied by In atoms has been found to be relatively stable to the running conditions [53].…”