“…The influence of the irradiation conditions (e.g., the laser energy) on field evaporation is typically quite complex for non- metallic samples such as semiconductors [46,47]. Recent experiments have demonstrated that the efficiency of the laser pulse depends on the dc field for a semiconductor tip, in comparison with metallic samples where this dependence is not observed [48][49][50].…”
“…The influence of the irradiation conditions (e.g., the laser energy) on field evaporation is typically quite complex for non- metallic samples such as semiconductors [46,47]. Recent experiments have demonstrated that the efficiency of the laser pulse depends on the dc field for a semiconductor tip, in comparison with metallic samples where this dependence is not observed [48][49][50].…”
“…A pulsed electric field is the primary method for extraction of surface ions for electrically conductive materials, but materials with poor electrical conductivity, such as oxides, require a pulsed laser to assist in the removal of surface ions by thermal excitation [15]. Although recent investigations have explored the physical mechanisms of evaporation, questions still remain regarding the sample and laser interactions and the mechanisms that assist in ion evaporation in oxides [16][17][18][19][20][21].…”
“…It is worth noting that APT analysis of the stoichiometry of Table 1. Relaxed lattice parameters of the binaries AlN [42] and InN [43] and stiffness coefficients [43,44] III-nitride materials is significantly dependent on the parameters used in the APT experiment for reasons which are still under debate [35,[49][50][51][52]. Nevertheless, for the analysis of both In 1-y Ga y N and Al 1−x In x N, the measured fraction of metallic sites occupied by In atoms has been found to be relatively stable to the running conditions [53].…”
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