2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low-temperature growth of layered PtSe 2 is presented defining a new paradigm for 2D material integration. The thermally-assisted conversion of platinum which is deposited by AS atomic layer deposition to PtSe 2 is demonstrated on various substrates with a distinct 3D topography. Further the viability of the approach is presented by successful on-chip integration of hybrid semiconductor devices, namely by the manufacture of a highly sensitive ammonia sensors channel with 3D topography and fully integrated infrared-photodetectors on silicon photonics waveguides. The presented methodologies of conformal and AS growth therefore lay the foundation for new design routes for the synthesis of more complex hybrid structures with 2D materials.

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Silicon field emitter arrays (FEAs) with different tip sizes and quantities were fabricated by saw dicing and anisotropic wet chemical etching by tetramethylammonium hydroxide. The tip is formed by the different etching rates of the crystal facets leading to a sharp pyramid based on {103} planes on the top and a hexadecagon based on {331} and {221} planes on the bottom. Electrical measurements at 10−5 mbar up to 10 μA show good reproducibility for FEAs with the same process parameters and higher uniformity and stability with an increasing number of tips. Constant current measurements at the same conditions and 10 μA show a mean electric field increase of about 0.06(3) V/(μm h) for p-type FEAs with a tip quantity of 3600. The shift increases with lower tip quantity and is higher for n-type FEAs compared to p-type. The degradation during the constant current measurement of n-type samples is found to be partly reversible by heating to 200 °C during emission. In contrast, heating of p-type FEAs induced further degradation instead of a regeneration effect.

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