The root of Paeonia lactiflora PALL (PL, Family Paeoniaceae) has been used frequently as an antipyretic and anti-inflammatory agent in traditional medicines of Korea, China and Japan. To evaluate antiallergic effect of PL, we isolated its main constituents, paeoniflorin and paeonol, and evaluated in vivo their inhibitory effects against passive cutaenous anaphylaxis (PCA) reaction induced by IgE-antigen complex and scratching behaviors induced by compound 48/80. PL, paeoniflorin and paeonol potently inhibited PCA reaction and scratching behaviors in mice. Paeoniflorin exhibited the most potent inhibition against scratching behaviors and the acetic acid-induced writhing syndrome in mice. Paeonol most potently inhibited PCA reaction and mast cells degranulation. These findings suggest that PL can improve IgE-induced anaphylaxis and scratching behaviors, and may be due to the effect of its constituents, paeoniflorin and paeonol.

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Nano-crystalline CeO2 was synthesized by the mechanical milling and subsequent heat-treatment from the mixture of Ce(OH)4 as precursor, and NaCl as diluent. The diluent provided diffusion barrier during milling and heat-treatment, which was easily dissolved out by deionized water. The size of crystallite and the strain variance of CeO2 were depended on the temperature and heat-treatment time: increased with the temperature (400~700oC) and time (1~24 hours) increasing, and saturated near at 20nm in size owing to the densification of diluent. The synthesized nano-crystalline CeO2 powder was applied as an abrasive in CMP (Chemical Mechanical Planarization) slurry. When blanket-type SiO2 and Si3N4 wafers were polished with the slurries, the removal rates (RR) of SiO2 and Si3N4 wafers and selectivities (RRSiO2/RRSi3N4) were influenced by synthetic condition of abrasive, the suspension stability and the pHs of slurries.

The feasibility of applying ZrO 2 . H x thin films as solid electrolytes in solid-state ionic energy systems, such as solid oxide fuel cells and supercapacitors was studied. ZrO 2 . H x thin films were deposited on Pt/Ti/SiO 2 /Si substrates by radio-frequency reactive sputtering with various hydrogen volume fractions in reactive gas. With a variation in hydrogen volume fraction, the surface roughness of the as-deposited films increased. In addition, the structure of the as-deposited films grew in the [111] direction with an increase in hydrogen volume fraction. By Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) studies, the Zr/O ratio and hydrogen distribution were evaluated. On the basis of a sample structure of Pt/ZrO 2 . H x /Pt/Ti/SiO 2 /Si for measuring an electrochemical property, an impedance measurement conducted at room temperature revealed an ionic conductivity of 1:67 Â 10 À6 S/cm, suggesting that ZrO 2 . H x thin films can possibly be used as solid oxide thin film electrolytes in all solid-state ionics power devices requiring a hydrogen conducting electrolyte.