unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of processfriendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities ( > 100 cm 2 V − 1 s − 1 ), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of highresolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

Phototransistors based on multilayer MoS(2) crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS(2) phototransistors. Multilayer MoS(2) phototransistors further exhibit high room temperature mobilities (>70 cm(2) V(-1) s(-1) ), near-ideal subthreshold swings (~70 mV decade(-1) ), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle B0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

Easily soluble expanded graphite is synthesized in a one-step exfoliation process that can be used for the lowcost mass production of graphene for various applications because of the simplicity and speed of the process. The graphene obtained is sufficiently expanded to be dispersed in aqueous solutions with an ordinary surfactant and in organic solvents.

There is some controversy regarding the effects of HNO3 on films of single-walled carbon nanotubes (SWCNTs). In this study we examined the change in sheet resistance of an HNO3-modified SWCNT film after different drying times at 85 degrees C using various analytical techniques. The shift and suppression in the Raman spectra, bleaching of the transition peaks related to van Hove singularities and a shift in the original peak in the C 1s XPS spectra provided evidence for p-type doping. A decrease in sheet resistance was also observed in the SWCNTs films due to the removal of residual N-methylpyrrolidone solvent on the surface and bundle of SWCNTs. These results suggest that p-type doping has a larger effect on the sheet resistance than the removal of residual N-methylpyrrolidone by an HNO3 treatment.