We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance under vacuum annealing up to 300 ˚C. The optimized HNO 3 doping conditions yield sheet resistances as low as 180 Ω/sq, which, under vacuum annealing, is significantly more stable than previously reported values.Raman and photoemission spectroscopy show that this stable graphene doping occurs by a bimodal mechanism. At mild conditions the dopants are weakly bonded to graphene, but at high acid temperatures and concentrations, the doping is higher and more stable upon post-doping annealing, without causing significant lattice damage. This work shows that large, stable hole concentrations can be induced by transfer doping in graphene.2