Four studies involving 573 female and 272 male college students demonstrated that multiple forms and measures of aggression were associated with high levels of sensation seeking, impulsivity, and a focus on the immediate consequences of behavior. Multiple regression analyses and structural equation models supported a theoretical model based on the general aggression model (C.A. Anderson & B.J. Bushman. 2002), positing that hostile cognition and negative affect mediate the relationships between the aforementioned individual differences and aggression. Sensation seeking also predicted a desire to engage in physical and verbal aggression. The final study demonstrated that relative to those scoring low, individuals scoring high on the consideration of future consequences are only less aggressive when aggression is likely to carry future costs.

The development of GaN-on-diamond devices holds much promise for the creation of high-power density electronics. Inherent to the growth of these devices, a dielectric layer is placed between the GaN and diamond, which can contribute significantly to the overall thermal resistance of the structure. In this work, we explore the role of different interfaces in contributing to the thermal resistance of the interface of GaN/diamond layers, specifically using 5 nm layers of AlN, SiN, or no interlayer at all. Using time-domain thermoreflectance along with electron energy loss spectroscopy, we were able to determine that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 mK/GW) because of the formation of an Si-C-N layer at the interface. The AlN and no interlayer samples were observed to have TBRs greater than 20 mK/GW as a result of a harsh growth environment that roughened the interface (enhancing phonon scattering) when the GaN was not properly protected.

The purpose of this study was to investigate the pattern of performance on letter and category fluency tests of individuals with mild cognitive impairment (MCI). Previous research has suggested that organization strategies, including "clustering" (i.e., groups of related words) and "switching" (i.e., shift from one cluster to another), are important for efficient verbal fluency performance. Participants were 25 individuals with single-domain amnestic MCI (aMCI), 49 with multidomain aMCI, 16 with non-amnestic MCI (naMCI), and 90 cognitively healthy older adults. Fluency performances were analyzed across two 30-s intervals for total words produced, cluster size, and switching. Analyses of variance (ANOVAs) with follow-up tests revealed that the single-domain aMCI group performed comparably with healthy controls on each dependent measure across both fluency tasks. In contrast, the multidomain aMCI group showed performance decrements in total words and switching production compared with healthy controls on both fluency tasks, whereas the naMCI group produced fewer words and switches on letter fluency. Each group generated more words and switches during the first 30-s on both fluency tasks, with the exception of the naMCI group, whose switching on letter fluency did not decrease as the task progressed. As indicated by the single-domain aMCI group's unimpaired performance, our findings demonstrate that verbal fluency performance decreases as domains beyond memory become impaired in MCI. Reduced switching ability, which has been linked to prefrontal executive functioning, contributed the most to the poorer performance of individuals with multidomain MCI and naMCI.

Objective Accurate time estimation abilities are thought to play an important role in efficient performance of many daily activities. This study investigated the role of episodic memory in the recovery of time estimation abilities following moderate to severe traumatic brain injury (TBI). Method Using a prospective verbal time estimation paradigm, TBI participants were tested in the early phase of recovery from TBI and then again approximately one year later. Verbal time estimations were made for filled intervals both within (i.e., 10 s, 25 s) and beyond (i.e., 45 s 60 s) the time frame of working memory. Results At baseline, when compared to controls, the TBI group significantly underestimated time durations at the 25 s, 45 s and 60 s intervals, indicating that the TBI group perceived less time as having passed than actually had passed. At follow-up, despite the presence of continued episodic memory impairment and little recovery in episodic memory performance, the TBI group exhibited estimates of time passage that were similar to controls. Conclusion The pattern of data was interpreted at suggesting that episodic memory performance did not play a noteworthy role in the recovery of temporal perception in TBI participants.

Integration of diamond and AlGaN/GaN highelectron mobility transistors (HEMTs) terminated with an in situ grown SiN x interface layer via metal organic chemical vapor deposition is investigated. The effect of diamond growth on the structure and interface properties of the HEMT is studied using high-resolution X-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and scanning transmission electron microscopy (STEM). No structural or physical damage is observed to the HEMT device layers as a result of the hot filament chemical vapor deposition diamond fabrication process. The TEM cross section confirms the smooth and abrupt interface of in situ SiN x /AlGaN/GaN before and after the diamond growth, with no detectable carbon diffusion into the GaN buffer layer. However, selective degradation of the in situ SiN x dielectric adhesion layer was observed at the SiN x /diamond interface. Using time domain thermoreflectance (TDTR), the effective isotropic thermal conductivity of the diamond was determined to be 176 −35 +40 W/m•K. The effective thermal boundary resistance of the diamond/ GaN interface (including the SiN x and additional layers) was 52.8 −3.2 +5.1 m 2 •K/GW.

We examined memory self-awareness and memory self-monitoring abilities during inpatient rehabilitation in participants with moderate to severe traumatic brain injury (TBI). Twenty-nine participants with moderate to severe TBI and 29 controls matched on age, gender, and education completed a performance prediction paradigm. To assess memory self-awareness, participants predicted the amount of information they would remember before completing list-learning and visual-spatial memory tasks. Memory self-monitoring was assessed by participants' ability to increase accuracy of their predictions after experience with the tests. Although the TBI participants performed more poorly than controls on both episodic memory tasks, no significant group differences emerged in memory self-awareness or memory self-monitoring. The TBI participants predicted that their memory performances would be poorer than that of controls, accurately adjusted their predictions in accordance with the demands of the tasks, and successfully modified their predictions following experience with the tasks. The results indicate that moderate to severe TBI individuals in the early stages of recovery can competently assess the demands of externally-driven metamemorial situations and utilize experience with task to accurately update their knowledge of memory abilities. Keywords traumatic brain injury; memory awareness; memory monitoring; metamemory; metacognition Accurate self-awareness and self-monitoring of memory abilities are important to everyday memory functioning. Individuals are more likely to successfully learn and retain information if they can accurately assess the demands of metamemorial situations. For example, if an individual is aware that they may experience difficulty learning important information, compensatory strategies can be initiated to help aid learning (Kennedy, 2004). After studying the material, the individual can also monitor their memory to determine whether the material was successfully learned or additional study time is needed. While memory self-awareness involves having accurate knowledge about one's memory abilities (Fleming, Strong, & Ashton, 1995), memory self-monitoring involves attending to and having an understanding about the (Hertzog, Saylor, Fleece, & Dixon, 1994;Koriat, 2000).A growing body of literature suggests that individuals with traumatic brain injury (TBI) who are more than one year post injury demonstrate accurate memory self-awareness and memory self-monitoring abilities (e.g., Kennedy, 2004;Schmitter-Edgecombe & Anderson, 2007;Schmitter-Edgecombe & Woo, 2004). However, few studies have explored impairment of metamemorial abilities during the early stages of recovery from TBI. This is an important area of study because, as past research has suggested, the more individuals with TBI are aware of deficits, the more they benefit from rehabilitation following injury (Lam, McMahon, Priddy, & Gehred-Schulz, 1988). In this study, we used a performance prediction paradigm to investigate memory self-aware...

Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS target using a KrF laser, has produced a high rate deposition method for growing luminescent thin films. Good stoichiometric quality and typical luminescent crystal structures have been observed with a predominant hexagonal phase and little evidence of the cubic phase. The luminescent characteristics were determined by cathodoluminescence and photoluminescence excitation and stable electroluminescence was observed under pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD film characteristics are compared with those observed in radio-frequency sputtered samples.

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