This article uses Sentaurus TCAD to establish the 3D device model of NMOS and PMOS under the 22nm FDSOI process, and establishes the 3D model of the 22nm FDSOI SRAM cell through this model. This model is used to numerically simulate the single event upset LET threshold of the 22nm FDSOI SRAM cell. The effects of different LET values and different incident conditions on the single event upset of a 22nm FDSOI SRAM cell are compared. The results show that whether the 22nm FDSOI SRAM cell is single event inversion depends on the transient current peak value generated after heavy ion incidence. For the 22nm FDSOI SRAM cell, the critical current peak value is about 0.011mA. Comparing the single event inversion thresholds at different incident positions, it is found that compared to the center of the channel, when a single event is incident on the channel-drain PN junction of an off-state N-type FDSOI device, the SRAM cell is more prone to single event inversion.
This paper presents an experimental study on the high-dose-rate transient ionizing radiation response and influencing factors of a Nano-Scale Fully Depleted Silicon-On-Insulator (FDSOI) D flip-flops (DFFs) circuit. Results indicate that data errors occur in DFFs at the lowest dose rate of 4.70 × 1011 rad(Si)/s in experiments, and the number of data errors shows a nonlinear increasing trend with the increase in dose rate and supply voltage. Three-dimensional technology computer-aided design (TCAD) simulations were conducted to analyze the transient photocurrent and charge collection mechanism at advanced process. The simulation results indicated that the charge collection efficiency is heightened with an increase in supply voltage, resulting in the higher photocurrent. This plays a major role in the process of charge collection for Ultra-Thin Body and Buried oxide (UTBB) FDSOI technology. The investigation into the high-dose-rate transient ionizing radiation effect (HDR-TIRE) in Nano-Scale FDSOI DFFs will aid in the assessment and application of advanced integrated circuits in aerospace.
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