Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Abstract

This paper presents an experimental study on the high-dose-rate transient ionizing radiation response and influencing factors of a Nano-Scale Fully Depleted Silicon-On-Insulator (FDSOI) D flip-flops (DFFs) circuit. Results indicate that data errors occur in DFFs at the lowest dose rate of 4.70 × 1011 rad(Si)/s in experiments, and the number of data errors shows a nonlinear increasing trend with the increase in dose rate and supply voltage. Three-dimensional technology computer-aided design (TCAD) simulations were conducted to analyze the transient photocurrent and charge collection mechanism at advanced process. The simulation results indicated that the charge collection efficiency is heightened with an increase in supply voltage, resulting in the higher photocurrent. This plays a major role in the process of charge collection for Ultra-Thin Body and Buried oxide (UTBB) FDSOI technology. The investigation into the high-dose-rate transient ionizing radiation effect (HDR-TIRE) in Nano-Scale FDSOI DFFs will aid in the assessment and application of advanced integrated circuits in aerospace.

Simulation study of trap-induced noise characteristics in FDSOI MOSFETs

“…[2][3][4][5] Additionally, FDSOI display radiation tolerance 6,7) and robustness across a wide temperature range. 8,9) As a result, they have demonstrated advantages in many fields such as wearable devices, 10,11) aerospace, 12,13) image sensor 14,15) and quantum computing. 16,17) As the device scales down, the low-frequency noise of the device continues to increase, 18,19) and the noise characteristics becomes essential especially for those high-performance applications.…”