Absiract-A systematic appmcb to directly extract the equivalent cireuit of the hetemjunction bipolar transistor (HBT) including the suhstrate network is developed. AU parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port. Equivalent cireuit without substrate effects can he extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from SOM& to 26.05GHz. The extracted mults are in excellent agreement with the measured d t s .I d e x Terms-direct extraction, equivalent c i d t , hetemjunction bipolar transistor, Sicnn Germanium, substrate network.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.