Systematic direct parameter extraction with substrate network of SiGe HBT

Abstract

Absiract-A systematic appmcb to directly extract the equivalent cireuit of the hetemjunction bipolar transistor (HBT) including the suhstrate network is developed. AU parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port. Equivalent cireuit without substrate effects can he extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from SOM& to 26.05GHz. The extracted mults are in excellent agreement with the measured d t s .I d e x Terms-direct extraction, equivalent c i d t , hetemjunction bipolar transistor, Sicnn Germanium, substrate network.