Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Sun, Yabin; Fu, Jun; Yang, Jian; Xu, Jun; Wang, Yudong; Zhou, Wei; Zhang, Wei; Cui, Jie; Li, Gaoqing; Liu, Zhihong

doi:10.1016/j.spmi.2014.12.028

Cited by 3 publications

(3 citation statements)

References 17 publications

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“…Besides, it is demonstrated that the proposed parameters extraction technique also applies to the case of forward mode, as discussed in our previous publication [24]. Fig.…”

Section: Resultsmentioning

confidence: 58%

“…However, the capacitance here represents the total of the BE junction capacitance and BC junction capacitance per unit length, and the resistance is the intrinsic base resistance per unit length. Using the transmission line equation and the boundary condition of and A, the admittance for SiGe HBTs with a CBEBC layout is given as (23) where (24) is the length of intrinsic base region. Here we define three parameters and as the total current flowing into base terminal , the capacitance , and the capacitance , respectively, where and .…”

Section: B Distributed Network Of Intrinsic Transistor (Region Ii)mentioning

confidence: 99%

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An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Sun

Yang

et al. 2015

IEEE Trans. Microwave Theory Techn.

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An improved high-frequency small-signal model for SiGe HBTs under the off-state is presented in this paper. The proposed model takes into account the distribution characteristics of the intrinsic transistor, link base region under spacer, and extrinsic base-collector junction. The equivalent circuit for each region is separately derived using the transmission line equation with reasonable approximations. Being different from previous models, the intrinsic base resistance in the proposed model is pushed inside the internal base node and added to the components of collector and emitter resistance. To extract all the parameters for the proposed model, a novel extraction technique based on rational function fitting over the whole range of frequencies is developed. After the rational function fitting to related admittance parameters, a number of coefficients are accurately obtained and then all the model parameters are directly extracted without any special test structure or numerical optimization. The proposed model and extraction technique are validated with a series of sized SiGe HBTs from 100 MHz to 20.89 GHz at a wide range of bias points. An excellent agreement is obtained between the measured and simulated S-parameters.

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“…Besides, it is demonstrated that the proposed parameters extraction technique also applies to the case of forward mode, as discussed in our previous publication [24]. Fig.…”

Section: Resultsmentioning

confidence: 58%

Section: B Distributed Network Of Intrinsic Transistor (Region Ii)mentioning

confidence: 99%

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Sun

Yang

et al. 2015

IEEE Trans. Microwave Theory Techn.

Self Cite

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show abstract

“…As demonstrated in our previous study, the small-signal model parameters can be precisely extracted based on the nonlinear rational function fitting. [15] However, we observed an abnormal variation of the collector epilayer resistance R C1C2 , and it decreases as the base voltage V BC increases, as shown in Fig. 2.…”

Section: Introductionmentioning

confidence: 67%

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Sun¹,

Li²,

Zhang³

et al. 2017

Chinese Phys. B

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In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.

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Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

Sun

Wang

et al. 2016

Superlattices and Microstructures

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Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Cited by 3 publications

References 17 publications

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

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