Low-pressure chemical vapor deposition of silicon-germanium ͑Si 1−x Ge x ͒ and its SPC below 400°C are investigated. The effects of precursor ratio ͓SiH 4 /SiH 2 Cl 2 ͑DCS͒:GeH 4 ͔, pressure, and temperature are examined with the goals of film composition tunability and high deposition rates. SiH 4 is found to be a better source gas than DCS because the decomposition rate of SiH 4 is faster than that of DCS during the deposition process. In the SiH 4 :GeH 4 system, the binary deposition mechanism is well explained by the "enhancement" model. The deposition temperature and chamber pressure affect the conversion factor, enabling independent tuning of the film composition and deposition rate. Amorphous Si 0.7 Ge 0.3 and Si 0.5 Ge 0.5 films are obtained at 350 and 400°C by adjusting the deposition conditions while keeping the deposition rates high. Compositional effects of the SiGe films on the SPC are also investigated.
We present a method to fabricate tensile-strained germanium-oninsulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 μm. The substrate fabrication process is compatible with complementary metal-oxidesemiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.
Low temperature
(<350°C)
growth of germanium (Ge) on silicon dioxide
(SiO2)
is demonstrated using a diborane pretreatment technique. Using
SiH4
and
normalB2normalH6
precursors,
Si1−xnormalBx
layers are deposited on
SiO2
to seed the chemical vapor deposition growth of Ge films. In the
SiH4:normalB2normalH6
system, the binary deposition mechanism of the
Si1−xnormalBx
film is explained by the “enhancement” model. In situ doping of Ge films is also investigated. In situ boron activation is achieved during the crystallization of the Ge films at
310°C
. Device applicability of the doped Ge film growth on oxide is demonstrated in a low temperature
(350°C)
Si p-channel metal-oxide-semiconductor field-effect transistor, in which the Ge layer is used as a gate electrode. The low temperature Ge growth technique can be used for low thermal budget processes, e.g., monolithic three-dimensional integrated circuits.
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