Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon–Germanium Films

Tada, Munehiro; Park, Jin‐Hong; Jain, Jinendra Raja; Saraswat, Krishna C.

doi:10.1149/1.3008009

Cited by 34 publications

(30 citation statements)

References 19 publications

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“…These values are the highest among the low temperature synthesized SGOIs. [16][17][18][19][36][37][38][39][40][41] The electrical properties of the Si 1-x Ge x layers were evaluated using Hall measurements with the Van der Pauw method. The sample of each composition was formed at three annealing temperatures.…”

Section: -2mentioning

confidence: 99%

“…[13][14][15] For incorporating SGOI structures in inexpensive glass substrates or three-dimensional large-scale integrated circuits (LSIs), the entire process from crystallization to device fabrication, including impurity doping, must be done at low temperature (<500 C) to avoid damage. [16][17][18][19] Metal-induced layer exchange (MILE) was developed for elemental Si [20][21][22][23][24][25][26][27][28][29] and Ge, [30][31][32][33][34][35] which allowed for large-grained, orientationcontrolled layers on insulators at low temperature. For optoelectronic device applications, the MILE using Al has been actively investigated for fabricating highly doped p-type layers, also working as seed layers for light absorption layers.…”

Section: Introductionmentioning

confidence: 99%

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Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Toko

Kusano

Nakata

et al. 2017

Journal of Applied Physics

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A composition tunable Si 1-x Ge x alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si 1-x Ge x on an insulator. The ALILE allowed Si 1-x Ge x to be large grained (> 50 lm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (400 C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si 1-x Ge x layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si 1-x Ge x layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, allowing other materials to be integrated on threedimensional integrated circuits, glass, and even a plastic substrate.

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Section: -2mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Toko

Kusano

Nakata

et al. 2017

Journal of Applied Physics

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“…For incorporating SGOI structures in inexpensive glass substrates or three-dimensional large-scale integrated circuits, low temperature process (< 500 °C) is required. In line with this, many growth techniques have been developed: chemical-vapor deposition [14][15][16][17], sputtering [18], laser annealing [19], and metal-induced crystallization (MIC) [20][21][22]. Among them, MIC is especially useful to lower the crystallization temperature of amorphous (a-) SiGe.…”

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confidence: 99%

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

et al. 2016

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Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions.Here we demonstrate a large-grained (> 100 µm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays.

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“…Many researchers have developed the advanced growth techniques: metal-induced solid-phase crystallization (SPC), laser annealing, and chemical-vapor deposition (CVD). [7][8][9] However, the grown Ge layers consisted of small grains (<lm) with almost random orientations.…”

mentioning

confidence: 99%

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Toko

Kurosawa

Saitoh³

et al. 2012

Appl. Phys. Lett.

144

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Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties J. Appl. Phys. 112, 084103 (2012) Method for investigating threshold field of charge injection at electrode/dielectric interfaces by space charge observation Appl. Phys. Lett. 101, 172902 (2012) An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulatorsemiconductor capacitors with SiO2/GeO2 bilayer passivation J. Appl. Phys. 112, 083707 (2012) Electron transport properties of carbon nanotube-graphene contacts Appl. Phys. Lett. 101, 153501 (2012) Response to "Comment on 'Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses'" [J. Appl. Phys. 112, 076101 (2012) (111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 C) and the native-oxidized Al (AlO x ) diffusioncontrol layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices. V C 2012 American Institute of Physics. [http://dx

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Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon–Germanium Films

Cited by 34 publications

References 19 publications

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

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