Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation

Tada, Munehiro; Park, Jin‐Hong; Kuzum, Duygu; Thareja, G.; Jain, Jinendra Raja; Nishi, Yoshio; Saraswat, Krishna C.

doi:10.1149/1.3295703

Cited by 23 publications

(18 citation statements)

References 13 publications

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“…The hole mobility is therefore high in the high-density regime. In the nucleation regime, the as-deposited Ge layer has dense crystalline Ge nuclei, which is common in vapor deposition 25 , 26 . Because SPC starts from the nuclei, the poly-Ge results in small grains.…”

Section: Discussionmentioning

confidence: 99%

“…To avoid thermal damage to the substrates and to lower the process costs, the low-temperature formation (<600 °C) of GOI is necessary. Polycrystalline Ge (poly-Ge) thin films have been directly formed on glass or plastic substrates at low temperatures using solid-phase crystallization (SPC) 17 – 21 , laser annealing 22 – 24 , chemical vapor deposition (CVD) 25 , 26 , flash lamp annealing (FLA) 27 , and metal-induced crystallization (MIC) 28 – 32 . The use of these techniques has allowed researchers to fabricate Ge thin-film transistors (TFTs) via all-low-temperature processes 20 , 21 , 27 , 32 .…”

Section: Introductionmentioning

confidence: 99%

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High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Toko

Yoshimine

Moto

et al. 2017

Sci Rep

116

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High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass substrate, focusing on the precursor conditions. The substrate temperature during the precursor deposition, T d, ranged from 50 to 200 °C. According to the atomic density of the precursor and the T d dependent SPC properties, the precursor conditions were determined by three regimes: the low-density regime (T d < 100 °C), high-density regime (100 ≤ T d ≤ 125 °C), and nucleation regime (T d > 125 °C). The use of the precursor in the narrow high-density regime enabled us to form SPC-Ge with a hole mobility of 340 cm2/Vs, the highest value among semiconductor thin films grown on insulators at low temperature (<900 °C). The origins of the high hole mobility were determined to be both a large grain size (5 µm) and a low energy barrier height (6.4 meV) for the grain boundary. The findings from and knowledge gained in this study, that is, the influence of the precursor conditions on subsequent crystal growth, will be universal and applicable to various materials.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Toko

Yoshimine

Moto

et al. 2017

Sci Rep

116

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“…[4][5][6][7][8] The most promising usage of such high-performance Ge-CMOS is to integrate it into Si large-scale integrated circuits (LSIs) or flat-panel displays. To achieve this, low-temperature Ge-on-insulator (GOI) technology has been developed, including solid-phase crystallization (SPC), [9][10][11][12][13] laser annealing, [14][15][16][17][18] chemical vapor deposition, 19,20 flash-lamp annealing, 21 the seed layer technique, 22 and metal-induced crystallization. [23][24][25][26][27] Using the resulting polycrystalline (poly-) Ge layers, p/n-channel MOSFETs 12,13,17,21,27 and even CMOS operation have been successfully demonstrated.…”

mentioning

confidence: 99%

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

Takahara

Moto

Imajo

et al. 2019

Applied Physics Letters

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Low-temperature synthesis of polycrystalline (poly-) Ge on insulators is a key technology to integrate Ge-CMOS into existing devices. However, Fermi level control in poly-Ge has been difficult because poly-Ge has remained naturally highly p-type due to its defect-induced acceptors. We investigated the formation of n-type poly-Ge (thickness: 100-500 nm) using the advanced solid-phase crystallization technique with Sb-doped densified precursors. Sb doping on the order of 10 20 cm À3 facilitated lateral growth rather than nucleation in Ge, resulting in large grains exceeding 15 lm at a low growth temperature (375 C). The subsequent heat treatment (500 C) provided the highest electron mobility (200 cm 2 /V s) and the lowest electron density (5 Â 10 17 cm À3) among n-type poly-Ge directly grown on insulators. These findings will provide a means for the monolithic integration of high-performance Ge-CMOS into Si-LSIs and flat-panel displays.

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“…Germanium is a promising candidate for a thin-film material because it has higher carrier mobilities than Si [1] and large light-absorbing capacity in the near-infrared [2]. Additionally, amorphous Ge (a-Ge) crystallizes at lower temperatures than the softening temperature of commonly-used glass (~550 °C) [3][4][5]. (111)-oriented Ge is particularly attractive because it provides a high carrier mobility for metal-oxide-semiconductor transistors [6,7] and acts as an epitaxial template for group III-V compound semiconductors [8,9], aligned nanowires [10,11], and spintronics materials [12].…”

Section: Introductionmentioning

confidence: 99%

Effects of Al grain size on metal-induced layer exchange growth of amorphous Ge thin film on glass substrate

2017

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Metal-induced layer exchange (MILE) has attracted increasing attention as a way to lower the crystallization temperature of amorphous semiconductor thin films on insulating substrates. This paper demonstrates that the quality of the catalytic Al layer strongly influences the growth properties in the MILE of amorphous Ge. The growth velocity of the MILE significantly decreases with increasing the deposition temperature of Al (TAl: RT-200 °C), while the grain size of crystallized Ge becomes maximum (28 μm) at TAl = 100 °C. This behavior is attributed to the Al grain size depending on TAl, which influences both the nucleation frequency and the lateral growth velocity of Ge in Al. These findings give new insight into MILE for fabricating high-quality semiconductor thin films at low temperatures on inexpensive substrates.

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Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation

Cited by 23 publications

References 13 publications

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

Effects of Al grain size on metal-induced layer exchange growth of amorphous Ge thin film on glass substrate

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