The prospect of pileup induced backgrounds at the High Luminosity LHC (HL-LHC) has stimulated intense interest in developing technologies for charged particle detection with accurate timing at high rates. The required accuracy follows directly from the nominal interaction distribution within a bunch crossing (σ z ∼ 5 cm, σ t ∼ 170 ps). A time resolution of the order of 20-30 ps would lead to significant reduction of these backgrounds. With this goal, we present a new detection concept called PICOSEC, which is based on a "two-stage" Micromegas detector coupled to a Cherenkov radiator and equipped with a pho- * tocathode. First results obtained with this new detector yield a time resolution of 24 ps for 150 GeV muons, and 76 ps for single photoelectrons.
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Detectors with a time resolution of 20-30 ps and a reliable performance in high particles flux environments are necessary for an accurate vertex separation in future HEP experiments. The PICOSEC-Micromegas detector concept is a Micro-Pattern Gaseous Detector (MPGD) based solution addressing this particular challenge. The PICOSEC-Micromegas concept is based on a Micromegas detector coupled to a Cherenkov radiator and a photocathode. In this detector concept, all primary electrons are initiated in the photocathode and the time jitter fluctuations are reduced. Different resistive anode layers have been tested with the goal of preserving a stable detector operation in a high intensity pion beam. One important characteristic of a gaseous detector in a high flux environment is the ion backflow (IBF). That can cause damage to more fragile photocathode materials like CsI. Various types of photocathode materials have been tested in order to find a robust solution against IBF bombardment.
In this work, TCAD modeling of a 1200 V SiC MOSFET is presented. The main focus is on modeling of the channel mobility, and the Coulomb scattering by interface traps and surface roughness are therefore included. For the Coulomb scattering, the interface trap profiles have been extrapolated from the subthreshold characteristics at room temperature, whereas the scattering due to surface roughness has been fitted by comparing to the transfer characteristics at high gate bias. A comparison with measurements for the transfer characteristic and the output characteristic is also presented. Results show that the reduction of the threshold voltage with increasing temperature and the temperature dependence of the output characteristics are properly modeled.
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