Fluidic memristor devices have received tremendous attention for smooth resistance switching in artificial synapses due to the ion migration, concentration polarization, and redox reactions mechanism. Here we provide a novel method of preparing microfluidic memristor with superior stability, robustness, and ultralow cost. The structure of the two-terminal memristor device is Cu/[MMIm][Cl]: H 2 O/Cu, C 5 H 9 N 2 Cl. The ionic liquid of 1,3-dimethylimidazole chloride salt was used as representative IL to display resistive memory properties in a cylindrical microchannel of a capillary. The fabricated device shows hysteretic and bipolar I−V characteristics of memristor, which can respond to external stimuli, e.g., space length between two electrodes and applied voltage. Meanwhile, this artificial synapse can mimic synaptic plasticity under various pulse stimuli stably and repeatedly, which results in temporary memory behavior. Such device exhibits great potential value in the area of neuromorphic artificial synapses and memory states.
The great potential of artificial optoelectronic devices that are capable of mimicking biosynapse functions in brain-like neuromorphic computing applications has aroused extensive interest, and the architecture design is decisive yet challenging. Herein, a new architecture of p-type Cu 2 ZnSnS 4 @BiOBr nanosheets embedded in poly(methyl methacrylate) (PMMA) films (CZTS@BOB-PMMA) is presented acting as a switching layer, which not only shows the bipolar resistive switching features (SET/RESET voltages, ∼ −0.93/+1.35 V; retention, >10 4 s) and electrical-and near-infrared light-induced synapse plasticity but also demonstrates electrical-driven excitatory postsynaptic current, spiking-timedependent plasticity, paired pulse facilitation, long-term plasticity, long-and short-term memory, and "learning−forgetting−learning" behaviors. The approach is a rewarding attempt to broaden the research of optoelectric controllable memristive devices for building neuromorphic architectures mimicking human brain functionalities.
Memristive devices with both electrically and optically induced synaptic dynamic behaviors will be crucial to the accomplishment of brain-inspired neuromorphic computing systems, in which the resistive materials and device architectures are two of the most important cornerstones, but still under challenge. Herein, kuramite Cu3SnS4 is newly introduced into poly-methacrylate as the switching medium to construct memristive devices, and the expected high-performance bio-mimicry of diverse optoelectronic synaptic plasticity is demonstrated. In addition to the excellent basic performances, such as stable bipolar resistive switching with On/Off ratio of ∼486, Set/Reset voltage of ∼−0.88/+0.96 V, and good retention feature of up to 104 s, the new designs of memristors possess not only the multi-level controllable resistive-switching memory property but also the capability of mimicking optoelectronic synaptic plasticity, including electrically and visible/near-infrared light-induced excitatory postsynaptic currents, short-/long-term memory, spike-timing-dependent plasticity, long-term plasticity/depression, short-term plasticity, paired-pulse facilitation, and “learning-forgetting-learning” behavior as well. Predictably, as a new class of switching medium material, such proposed kuramite-based artificial optoelectronic synaptic device has great potential to be applied to construct neuromorphic architectures in simulating human brain functions.
In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For this reason, to optimize ions migration paths in the dielectric layer itself in the Al/CuxS/Cu structure, uniform CuxS nanosheets films have been synthesized using anodization for various time spans. And the Al/CuxS/Cu devices show a low operating voltage of less than 0.3 V and stable RS performance. At the same time, a reversible negative differential resistance (NDR) behavior is also demonstrated. And then, the mechanism of repeatable coexistence of RS effect and NDR phenomenon is investigated exhaustively. Analyses suggest that the combined physical model of space-charge limited conduction (SCLC) mechanism and conductive filaments bias-induced migration of Cu ions within the CuxS dielectric layer is responsible for the RS operation, meanwhile, a Schottky barrier caused by copper vacancy at the CuxS/Cu interface is demonstrated to explain the NDR phenomenon. This work will develop a new way to optimize the performance of non-volatile memory with multiple physical attributes in the future.
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