Optoelectronic Memristive Synapse Behavior for the Architecture of Cu₂ZnSnS₄@BiOBr Embedded in Poly(methyl methacrylate)

Abstract

The great potential of artificial optoelectronic devices that are capable of mimicking biosynapse functions in brain-like neuromorphic computing applications has aroused extensive interest, and the architecture design is decisive yet challenging. Herein, a new architecture of p-type Cu 2 ZnSnS 4 @BiOBr nanosheets embedded in poly(methyl methacrylate) (PMMA) films (CZTS@BOB-PMMA) is presented acting as a switching layer, which not only shows the bipolar resistive switching features (SET/RESET voltages, ∼ −0.93/+1.35 V; retention, >10 4 s) and electrical-and near-infrared light-induced synapse plasticity but also demonstrates electrical-driven excitatory postsynaptic current, spiking-timedependent plasticity, paired pulse facilitation, long-term plasticity, long-and short-term memory, and "learning−forgetting−learning" behaviors. The approach is a rewarding attempt to broaden the research of optoelectric controllable memristive devices for building neuromorphic architectures mimicking human brain functionalities.

A covalent organic polymer-based transistor with multifunctional memory and synaptic functions

“…In recent years, various devices have been investigated to mimic synapses, including memristors, [5][6][7][8][9][10][11][12][13] field-effect transistors, [14][15][16][17] ferroelectric memories, 18,19 complementary metal-oxide semiconductor (CMOS) devices, 2,20 phase-change memory 21,22 and floating gate memory transistors. [23][24][25] However, significant impediments and challenges still exist.…”

Probing the Photo-Activated Switching Dynamics of Halide Perovskite Memristors

“…Among these, the widely accepted mechanisms are (i) the formation of conductive filaments (CFs) resulting from the migration of active metal ions; − (ii) the formation of filament because of migration of halide ions and their vacancies; , (iii) the competition between active metal ions CFs and halide ions their vacancies CFs . Moreover, due to their photo-responsive behavior, light-induced resistive switching has been realized in several photonic synaptic devices, − proving that optical stimulations can manipulate the resistive switching characteristics of halide perovskite memristors. Despite significant progress in device architecture, the switching mechanism with light as an external stimulator is still under debate.…”