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What is the most significant result of this study?In this study,i norganic planar perovskite solar cells based on CsPbI 2 Br and ac arbon electrode were constructed without having to use an expensive and unstable hole-transportation layer.R ubidiumd oping of CsPbI 2 Br could effectively passivate the trap state, improve structure stabilitya nd boost the device efficiency.

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The vapor transport deposition of quasi‐one‐dimensional antimony selenosulfide (Sb2(S,Se)3) has recently attracted increasing research interest for the inexpensive, high‐throughput production of thin film photovoltaic devices. Further improvements in Sb2(S,Se)3 solar cell performance urgently require the identification of processing strategies to control the orientation, however the growth mechanism of high quality absorbers is still not completely clear. Herein, a facile and general vapor transport deposition approach to precisely control the growth of large‐grained dense Sb2(S,Se)3 films with good crystallization and preferred orientation via the source vapor speed is utilized. It is found that defect activation energy rather than the defect concentration plays a decisive role in the Sb2(S,Se)3 photovoltaic performance. Admittance spectroscopy analysis is used to obtain efficient Sb2(S,Se)3 solar cells. By employing dual‐source coordinations to optimize the absorber layer a power conversion efficiency of 8.17% is obtained which is the highest efficiency for Sb2(S,Se)3 solar cells fabricated by vapor transport technology. This study suggests that there are other opportunities for gaining deeper a understanding of the defect physics and carrier recombination mechanisms in other highly oriented low‐dimensional materials to achieve improved device performance.

Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

Cu2ZnSnS4 (CZTS) absorbers have been successfully deposited on tin-doped indium oxide coated glass (ITO/glass) substrates by sulfurization process of co-electrodeposited Cu–Zn–Sn–S precursor thin films at various annealing temperatures ranging from 500 to 580 °C for 30 min in an atmosphere of Ar–H2S (6.5%).

Cu2ZnSnS4 (CZTS) thin films with fine control over composition and pure phase were fabricated by sulfurization of co-electroplated Cu–Zn–Sn–S precursors.