A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency

Abstract

Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

Proposition and computational analysis of a kesterite/kesterite tandem solar cell with enhanced efficiency

“…Such tandem junction solar cell would be eco-friendly having low fabrication cost as well as printable with existing technologies. [31][32][33][34] Moreover, this may overcome the limitations of perovskite/CZTSSe cell with the use of CZTS in place of perovskite. In this work, we investigate the prospect of kesterite/kesterite dual-junction tandem solar cells by computational analysis where CZTS (band gap $ 1.56 eV) 35 and CZTSe (band gap $ 1.04 eV) 36 are used as absorber layers for top and bottom cells, respectively.…”

Improved interfacial properties of electrodeposited Cu2ZnSn(S,Se)4 thin‐film solar cells by a facile post‐heat treatment process

“…1,4,5 However, the reported maximum conversion efficiency of CZTSSe is only 12.6%, 6,7 which is far below the theoretical solar conversion efficiency of Cu 2 ZnSnS 4 (CZTS)-based thin-film solar cells (32.4%). 8 Extensive research to improve the poor efficiency of CZTSSe solar cells has focused on the reduction of the high V OC deficit, which is also related with their low fill factor (FF). The high V OC deficit has been attributed to the presence of a large amount of disorder and/or compensation defects, severe interfacial recombination between the absorber and the buffer layer, and non-ohmic back contact between CZTSSe and MoS 2 .…”

A large-volume manufacturing of multi-crystalline silicon solar cells with 18.8% efficiency incorporating practical advanced technologies

“…S3b †) and the other followed the standard cell fabrication process (Fig. 28,29 The rise in J sc originates from the better IQE performance at short wavelengths due to the lower surface phosphorus concentration and the higher FF is attributed to the good ohmic contact between the metal grid and the heavily doped emitter underneath of contact grid. As illustrated in Table S4, † there is an absolute efficiency improvement of 0.35%, an increase of 3.3 mV in V oc , 0.61 mA cm À2 in J sc and 0.09% in FF for the selective emitter group compared to the reference group.…”