Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells

An effective combination reaction involved with sputtered and selenized Sb precursors for efficient Sb2Se3 thin film solar cells

“…Therefore, crystal orientation has become an essential issue in high-efficiency Sb 2 Se 3 thin film solar cell fabrication. Various thin film deposition techniques have been applied to fabricate highly optimized Sb 2 Se 3 absorber layer, such as solution method, [8][9][10][11] thermal evaporation, [7,[12][13][14][15] vapor transport deposition (VTD), [16][17][18] close spaced sublimation (CSS) [6,19,20] and sputtering. [21,22] To date, the highest PCE of Sb 2 Se 3 thin film solar cells in the substrate and superstrate configurations are 9.2% [19] and 7.6%, [16] respectively, where CSS and VTD methods were utilized to tune the crystal orientation and crystallinity of the Sb 2 Se 3 absorber layer precisely.…”

“…Interface engineering was also conducted in Sb 2 Se 3 devices as attempts have been made by introducing additional buffer layers to passivate defects at the heterojunction. [9,18,23] However, it is widely accepted that a perfected light absorber layer still plays the most important role in Sb 2 Se 3 photovoltaics.…”

Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviour

“…Impressive device efficiencies have been achieved with a range of device structures and both with and without a variety of interfacial layers. [7][8][9][10] Previous work has shown that device performance depends strongly on the orientation of the nanoribbons in the film and, thus far, a large fraction of work on this material has focused on optimising growth conditions to achieve optimal orientation [4][5][6][10][11][12]. As a result there are many aspects of material and device behaviour that are still poorly understood, such as front and back contacting.…”

1D/3D Alloying Induced Phase Transition in Light Absorbers for Highly Efficient Sb2Se3 Solar Cells

“…Sb 2 Se 3 films grown in a Se‐rich environment exhibited longer carrier lifetime and demonstrated lower interfacial and bulk defects. Vapor transport deposition (VTD) technique was developed to fabricate the Sb 2 Se 3 absorber layers, where the density of dominant deep defects was reduced by one order of magnitude, and efficiencies over 7.5% were obtained . Very recently, we achieved a new world record efficiency as high as 9.2%, by performing interface engineering on high‐quality Sb 2 Se 3 nanorod array absorbers .…”