The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBr x I 3−x -based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBr x I 3−x -based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼10 2 ), stable endurance (10 3 cycles), and long retention time (10 4 s). The CsPbBr x I 3−x -based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI 3 , CsPbBrI 2 , and CsPbBr 2 I memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBr 2 I-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.
Tin telluride (SnTe) quantum dots (QDs) have attracted considerable interest in the optoelectronic field owing to their favorable properties over conventional QDs, such as a relatively large Bohr radius (95 nm) and low toxicity level. However, till date, the nonlinear optical properties and ultrafast photonics applications of SnTe QDs have remained unexplored. In this study, SnTe QDs with an average diameter of 74 nm (smaller than the Bohr radius of SnTe) are fabricated via a liquid‐phase exfoliation method. Consequently, the nonlinear saturable absorption properties of such SnTe QDs are explored by realizing a modulation depth of 2.2% and saturable intensity of 1.67 GW cm−2. The prepared QDs are then used as saturable absorber (SA) in the erbium‐doped fiber laser ring cavity system. Moreover, Q‐switched and mode‐locked laser pulses with a pulse width of 1.81 µs and 691 fs are generated, respectively. Harmonic mode‐locking with a high repetition rate of 62.1 MHz (fifth order) is experimentally realized. This is the first demonstration, to the authors’ knowledge, of using SnTe QDs‐SA for generating ultrafast laser pulses along with high‐repetition‐rate harmonic mode‐locking pulses. Therefore, this study will establish a new research scope for SnTe QDs in ultrafast photonics, nonlinear photonics, frequency combs, and optical communications.
We report on an efficient Er:SrF laser at 2.79 μm. A continuous wave output power of 1.06 W was obtained with a slope efficiency of 41%, significantly exceeding the Stokes efficiency of 35%. Stable Q-switched laser operation was realized by using an ReS saturable absorber, generating an average output power of 0.58 W with a pulse duration of 508 ns at a repetition rate of 49 kHz, corresponding to a pulse energy of 12.1 μJ.
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