Tin Telluride Quantum Dots as a Novel Saturable Absorber for Q‐Switching and Mode Locking in Fiber Lasers

Ahmed, Syed M.; Qiao, Jian‐Tian; Cheng, Ping; Saleque, Ahmed Mortuza; Hossain, Mohammad Ismail; Zeng, Longhui; Zhao, Jia; Qarony, Wayesh; Tsang, Yuen Hong

doi:10.1002/adom.202001821

Cited by 36 publications

(21 citation statements)

References 65 publications

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“…They influence the surface energy of different facets found on the surface of the cubic structural phase of SnS {(101) (111) (040) (002)}, orthorhombic phase of SnSe {(111) (131)}, cubic rock salt crystal structure of SnTe (200) and hexagonal phase of ZnTe {(101) (102) (111)}. This affects the final structure of the QDs and determines the atomic arrangement on their surface, which causes variations in the optical bandgap energy of the QDs [59][60][61][62][63][64][65][66][67].…”

Section: Resultsmentioning

confidence: 99%

Comparative energy bandgap analysis of zinc and tin based chalcogenide quantum dots

Ahamed

Kumar³

et al. 2022

Rev. Mex. Fís.

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Semiconductors with wide bandgap are crucial for optoelectronic devices and energy applications owing to their electron confinement, high optical transparency and tunable electrical conductivity. Therefore, in this study, the quantum confinement effect of the energy bandgap of chalcogenide semiconductor nanocrystals such as ZnS, ZnSe, ZnTe, SnS, SnSe and SnTe are studied based on the Brus model using the effective mass approximation, the hyperbolic band model and the cohesive energy model. The obtained results indicate that the value of energy bandgap differs from the bulk crystals related to the quantum confinement effect. These verdicts confirm the quantum confinement effects of materials and their potential applications in optoelectronic devices. Theoretical findings are compared with its valid experimental data.

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Section: Resultsmentioning

confidence: 99%

Comparative energy bandgap analysis of zinc and tin based chalcogenide quantum dots

Ahamed

Kumar³

et al. 2022

Rev. Mex. Fís.

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“…The nonlinear parameters of the DAST solution obtained from the best fit of the data are shown in Table 1, one can see that α NL , Imχ (3) , FOM, and I s of the DAST solution are −2.06 cm GW −1 , −2.33 × 10 −12 esu, 4.57 × 10 −13 esu cm, and 3.20 GW cm −2 , respectively. For comparison, the NLO parameters of other SA materials previously measured under similar conditions are also summarized in Table 1.…”

Section: Nonlinear Absorption Performancesmentioning

confidence: 98%

Ultra‐High Nonlinear Saturable Absorption Responses and Ultra‐Fast Carrier Dynamics of Organic DAST

Zhang

et al. 2022

Advanced Optical Materials

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organic SA materials have been identified and investigated in the past decades. [4][5][6][7][8][9] Nevertheless, most inorganic SA materials, such as graphene (G), [6] black phosphorus (BP), [7] transition metal sulfides, [4,8] and topological insulators, [9] still suffer from some inherent limitations. For example, the saturation modulation depth of a monolayer G is only 0.5−1.8% in the wavelength range of 800−1500 nm, unsuitable for stable mode-locking. [10] The oxidation in ambient air of BP has been an impediment to its commercialization and industrialization. [11] The bulk transition metal sulfides are unable to generate ultra-short laser pulses, due to their long intraband electron relaxation times, at the scale of picosecond. [10,12] The extremely low saturation intensities of topological insulators at the scale of W cm −2 hinder their practical applications in continuous-wave modelocking. [10,13] Particularly, these aforementioned inorganic SA materials generally lack a controllable, reproducible, high-yield, and low-cost preparation process. [10] In contrast, organic SA materials have shown the advantages of good flexibility, reproducible preparation processes, diverse molecular design possibilities, and fast NLO responses. [14][15][16] However, the nonlinear SA performances of most organic SA materials are generally lower than those of inorganic SA materials, limiting practical applications of the former in the optoelectronic devices. [16] Moreover, the transient carrier dynamics of most organic SA materials, important for Third-order nonlinear optical (NLO) absorption properties and ultra-fast carrier dynamics of organic 4-N,N-dimethylamino-4'-N'-methyl-stilbazolium tosylate (DAST) at the wavelength of 520 nm are investigated by femtosecond open-aperture Z-scan technique and transient absorption spectroscopy, respectively. Z-scan measurements indicate that DAST solution exhibits ultra-high nonlinear saturable absorption (SA) responses with a figure of merit of 4.57 × 10 −13 esu cm and a saturation strength of 3.20 GW cm −2 , far superior to those of the most known 2D SA materials under similar excitations. Transient absorption results reveal that the outstanding SA performances of the solution-phase DAST are rooted in ultra-fast ground-state bleaching based on the Pauli blocking effect. The subsequent excited state carrier relaxation processes are dominated by rapid intraband carrier cooling and defect-assisted interband Auger recombination. Moreover, high-quality DAST−polyvinyl alcohol composite films prepared by solution casting exhibit similar ultra-high SA responses and reliable long-term stability without any degradation of their SA responses even after exposure to air moisture for 100 days. These findings establish an experimental and theoretical foundation for the development of high-performance ultra-fast optoelectronic devices based on organic NLO materials in the future.

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“…Among them, some other nanomaterials with nonlinear optical absorption properties have emerged, such as black phosphorus [44], topological insulators, and layered metal disulfide such as molybdenum disulfide (MoS 2 ) [13,45], tungsten disulfide (WS 2 ) [46], and tin disulfide (SnS 2 ) [47,48], etc. These materials have been widely used as SAs for ultrafast fiber lasers [13,49,50]. Even so, it is still necessary to explore new nanomaterials and to investigate their nonlinear optical absorption properties to meet the application requirements of different fields.…”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis of Monodispersed Titanium Nitride Quantum Dots for Harmonic Mode-Locking Generation in an Ultrafast Fiber Laser

Yang

Zou

et al. 2022

Nanomaterials

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As a member of the transition metal nitride material family, titanium nitride (TiN) quantum dots (QDs) have attracted great attention in optical and electronic fields because of their excellent optoelectronic properties and favorable stability. Herein, TiN QDs were synthesized and served as a saturable absorber (SA) for an ultrafast fiber laser. Due to the strong nonlinear optical absorption characteristics with a modulation depth of ~33%, the typical fundamental mode-locked pulses and harmonics mode-locked pulses can be easily obtained in an ultrafast erbium-doped fiber laser with a TiN-QD SA. In addition, at the maximum pump power, harmonic mode-locked pulses with a repetition rate of ~1 GHz (164th order) and a pulse duration of ~1.45 ps are achieved. As far as we know, the repetition rate is the highest in the ultrafast fiber laser using TiN QDs as an SA. Thus, these experimental results indicate that TiN QDs can be considered a promising material, showing more potential in the category of ultrafast laser and nonlinear optics.

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Tin Telluride Quantum Dots as a Novel Saturable Absorber for Q‐Switching and Mode Locking in Fiber Lasers

Cited by 36 publications

References 65 publications

Comparative energy bandgap analysis of zinc and tin based chalcogenide quantum dots

Comparative energy bandgap analysis of zinc and tin based chalcogenide quantum dots

Ultra‐High Nonlinear Saturable Absorption Responses and Ultra‐Fast Carrier Dynamics of Organic DAST

Facile Synthesis of Monodispersed Titanium Nitride Quantum Dots for Harmonic Mode-Locking Generation in an Ultrafast Fiber Laser

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