A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e−/s at 60 °C, an ultra-low read noise of 0.90 e−·rms, a high full well capacity (FWC) of 4100 e−, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.
The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependence on transfer-gate off-voltage. INDEX TERMS Active pixel sensors (APS), CMOS image sensors (CIS), pinned photodiode (PPD), full well capacity (FWC), pinning voltage.
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