This paper presents a dual-polarization antenna with high spectral efficiency for transmission application distance at 60 GHz. The dual-polarization antenna is integrated with the receivers through flip chip on the LTCC substrate at 60 GHz. The receiver front-end composes of a low noise amplifier and demodulator fabricated in 65-nm CMOS process. The conversion gain is higher than 14 dB and the noise figure is lower than 6 dB from 57 to 66 GHz. The total data rate of the proposed system's spectral efficiency is up to 12 bit/s/Hz for wireless measurement and the EVM is below 5.5 %. INDEX TERMS Dual polarization antenna, millimeter-wave, low temperature co-fired ceramics, 5G, MIMO.
This paper describes a direct-conversion E-band transmitter (TX) in 65-nm CMOS. To demonstrate the feasibility of E-band 1024-quadrature amplitude modulation (QAM), a 67 to 86 GHz direct-conversion CMOS transmitter with broadband image rejection is presented. The transmitter contains an I (in-phase) and Q (quadrature-phase) modulator and a five-stage power amplifier. To achieve a 40 dBc image-rejection ratio (IRR) of the I/Q modulator for E-band, a broadband half-quadrature generator (HQG), which contains a composite right/left-handed (CRLH) based divider, quadrature couplers, and baluns is proposed. For the purpose of minimizing the phase imbalance, phase balance lines are utilized in HQG to achieve a 1-degree phase accuracy under different tuning lines. Subsequently, the reflection can be mitigated by optimizing the impedance matching between the HQG and the mixer core. Meanwhile, because millimeter-wave (MMW) circuits are susceptible to process variations, a process-variation-tolerant design is introduced to mitigate IRR variation, especially under 40 dBc. The transmitter demonstrates a measured flat conversion gain (CG) of 23 ± 2 dB from 56 to 86 GHz. The proposed TX achieves an IRR better than 40 dBc from 67 to 86 GHz (bandwidth of 19 GHz) with a peak IRR of 56.2 dBc at 70 GHz. Furthermore, the proposed TX has exhibited a 6 bit/s/Hz spectral efficiency with 1024-QAM under the orthogonal frequency-division multiplexing (OFDM) modulation format. The 1.129 mm 2 E-band TX achieves a measured output power of 6.5 dBm with a total dc power consumption of 164 mW from a 1.2 V supply voltage. INDEX TERMS CMOS, E-band, half-quadrature generator (HQG), image-rejection ratio (IRR), millimeter-wave (MMW) integrated circuit, process-variation-tolerant design, transmitter (TX), 1024-quadrature amplitude modulation (QAM).
A novel design of photonic crystal waveguide crossing based on multimode-interference (MMI) structure is proposed. Two structures of difference device lengths are simulated and studied. The proposed structures have high transmission efficiency for a wide bandwidth. The crosstalk is -26dB with device length of 12 lattice periods and -39dB with device length of 24 lattice periods. The plane wave expansion method and finite-difference time-domain method are used to calculate the modal dispersion curve and field propagation, respectively. The proposed MMI-based waveguide crossing has the potential to be practical in high-density optical integrated circuits.
In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-lm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ! 8.4 dB, P sat ! 21.4 dBm with power added efficiency ! 31% in a compact chip size of 0.5 mm 2 . This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm 2 ) with other stateof-the-art class-E PAs at higher frequency. K E Y W O R D S class-E, CMOS, concurrent, dual-band, impedance matching network, power amplifier (PA)
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