A dual‐band class‐E power amplifier with concurrent matching network in 0.18‐μm CMOS

Abstract

In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-lm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ! 8.4 dB, P sat ! 21.4 dBm with power added efficiency ! 31% in a compact chip size of 0.5 mm 2 . This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm 2 ) with other stateof-the-art class-E PAs at higher frequency. K E Y W O R D S class-E, CMOS, concurrent, dual-band, impedance matching network, power amplifier (PA)