Class F and Inverse Class F Dual Modes Dual Bands Power Amplifier

Yang, Fei; Yu, Hao; Ruizhu, Liu; Xinyang, He; Zhang, Anxue; Jin, Zhonghe

doi:10.1109/iws49314.2020.9360107

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…A transmission line is added between the two stages to adjust the impedance of the second and third harmonics without changing the impedance at the fundamental frequency. Harmonic control is very effective for improving the efficiency of RF transistors, especially when using the Class-F [13][14][15][16][17] work model.…”

Section: Introductionmentioning

confidence: 99%

Design of Concurrent Tri-Band High-Efficiency Power Amplifier Based on Wireless Applications

Gao

Nan

2022

Electronics

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To meet the existing requirements of multiband communication and improve the efficiency and performance of communication RF modules, a concurrent tri-band high-efficiency power amplifier operating in three frequency bands is proposed. The input and output impedance values of concurrent power amplifier is analyzed, and the input and output-matching circuit and bias circuit are designed. Through the impedance compensation principle, the impedance matching of three frequency bands is realized, and the amplifier can maintain high power and high efficiency at three arbitrary wide interval frequencies. To this end, a simultaneous tri-band power amplifier is designed and tested by using transistor CGH40010F. The experimental results show that the peak power of the designed simultaneous tri-band high-efficiency power amplifier is more than 10 W, the power-added efficiency reaches 55~69%, and the amplification gain is about 10 dB at three frequency bands of 2.2, 2.6, and 3.5 GHz. The design of concurrent tri-band high-efficiency power amplifier is flexible, the calculation of microstrip line parameters is simple, and it can work in three frequency bands simultaneously. It provides an effective structure scheme for designing concurrent power amplifiers in transmitting systems.

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