The ordered tin disulfide (SnS2) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS2nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS2nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS2nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).
We present a novel absorber material—NaSbS2—for solar cells. NaSbS2 is formed as an unexpected byproduct in the chemical synthesis of Sb2S3. However, NaSbS2 has many attractive features for a solar material. Here single phase NaSbS2 nanoparticles were synthesized through solution processing. NaSbS2 semiconductor-sensitized solar cells were demonstrated for the first time. The best cell yielded Jsc = 10.76 mA/cm2, Voc = 0.44 V, FF = 48.6%, and efficiency η = 2.30% under 1 sun. At the reduced 0.1 sun, the η increased to 3.18%—a respectable η for a new solar material.
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